Atomic and electronic structure of the nonpolar GaN(11-00) surface (Articolo in rivista)

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  • Atomic and electronic structure of the nonpolar GaN(11-00) surface (Articolo in rivista) (literal)
Anno
  • 2009-01-01T00:00:00+01:00 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi
  • 10.1103/PhysRevB.80.115324 (literal)
Alternative label
  • Bertelli M. a; Loeptien P. a; Wenderoth M a.; Rizzi A. a; Ulbrich R. a; Righi M.C. b; Ferretti A. b; Martin-Samos L. b; Bertoni C. b; Catellani A. c (2009)
    Atomic and electronic structure of the nonpolar GaN(11-00) surface
    in Physical review. B, Condensed matter and materials physics (Online); American Physical Society (APS), College Pk (Stati Uniti d'America)
    (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
  • Bertelli M. a; Loeptien P. a; Wenderoth M a.; Rizzi A. a; Ulbrich R. a; Righi M.C. b; Ferretti A. b; Martin-Samos L. b; Bertoni C. b; Catellani A. c (literal)
Pagina inizio
  • 115324-1 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume
  • 80 (literal)
Rivista
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  • In: Physical Review B, vol. 80 article n. 115324. The American Physical Society, 2009. (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#pagineTotali
  • 7 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroFascicolo
  • 11 (literal)
Note
  • ISI Web of Science (WOS) (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
  • a IV. Physikalisches Institut, Georg-August-Universität Göttingen, D-37077 Göttingen, Germany; b CNR-INFM, Modena - S3, Italy; c CNR-IMEM, Parma, Italy (literal)
Titolo
  • Atomic and electronic structure of the nonpolar GaN(11-00) surface (literal)
Abstract
  • We present a cross-section scanning tunneling microscopy (STM), scanning tunneling spectroscopy (STS) and ab initio density-functional theory simulations study of the cleaved nonpolar (1100) surface (m-plane) of n-type HVPE GaN free-standing quasisubstrates. Atomically resolved empty and filled states STM topographies show that no reconstruction occurs upon cleavage, as predicted by theory. STS measurements on clean and atomically flat cleaved surfaces (defect concentration sigmad=3×1013 cm−2, the Fermi energy is pinned inside the band gap in defect-derived surface states and tunneling through filled (empty) N-like (Ga-like) states takes place. (literal)
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