A new growth method for the synthesis of 3C-SiC nanowires (Articolo in rivista)

Type
Label
  • A new growth method for the synthesis of 3C-SiC nanowires (Articolo in rivista) (literal)
Anno
  • 2009-01-01T00:00:00+01:00 (literal)
Alternative label
  • Attolini G.; Rossi F.; Fabbri F.; Bosi M.; Watts B. E.; Salviati G. (2009)
    A new growth method for the synthesis of 3C-SiC nanowires
    in Materials letters (Gen. ed.)
    (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
  • Attolini G.; Rossi F.; Fabbri F.; Bosi M.; Watts B. E.; Salviati G. (literal)
Pagina inizio
  • 2581 (literal)
Pagina fine
  • 2583 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume
  • 63 (literal)
Rivista
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#note
  • In: Materials Letters, vol. 63 pp. 2581 - 2583. Elsevier, 2009. (literal)
Note
  • ISI Web of Science (WOS) (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
  • CNR-IMEM, Parma (literal)
Titolo
  • A new growth method for the synthesis of 3C-SiC nanowires (literal)
Abstract
  • A new method has been developed to grow nickel-catalysed SiC nanowires on silicon, by a chemical reaction involving carbon tetrachloride as a single precursor. This produces long crystalline 3C-SiC nanowires with 111 axis, as verified by transmission electron microscopy. A broad optical emission centred at about 2 eV is detected by cathodoluminescence spectroscopy. The Gaussian component at about 2.2 eV corresponds to the indirect 3C-SiC band gap emission, while the dominant red emission is related to oxygen incorporation. (literal)
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