http://www.cnr.it/ontology/cnr/individuo/prodotto/ID32801
Boron oxide encapsulated vertical Bridgman grown CdZnTe crystals as X-ray detector material (Articolo in rivista)
- Type
- Label
- Boron oxide encapsulated vertical Bridgman grown CdZnTe crystals as X-ray detector material (Articolo in rivista) (literal)
- Anno
- 2008-01-01T00:00:00+01:00 (literal)
- Alternative label
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
- Zappettini A.; Zha M.; Marchini L.; Calestani D.; Mosca R.; Gombia E.; Zanotti L.; Zanichelli M.; Pavesi M.; Auricchio N.; Caroli E. (literal)
- Pagina inizio
- Pagina fine
- Rivista
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#note
- In: Proceedings of the Ieee, pp. 118 - 121. 2008 IEEE Nuclear Science Symposium Conference Record - Dresden, Germany (19-25 Oct. 2008). IEEE, 2008. (literal)
- Note
- ISI Web of Science (WOS) (literal)
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
- CNR-IMEM, Parma, Dipartimento di Fisica, Università di Parma, Department of Physics, University of Ferrara, INFN / Sezione di Ferrara, and INAF/IASF-Bologna,, INAF/IASF-BO, Via Gobetti 101, 40129 Bologna (literal)
- Titolo
- Boron oxide encapsulated vertical Bridgman grown CdZnTe crystals as X-ray detector material (literal)
- Abstract
- CdZnTe crystals doped with indium were grown by the boron oxide vertical Bridgman technique, with a diameter of 2-inches. The crystals showed large single crystalline yield and low etch pit density. The background impurity content was dominated by boron in concentration lower than 1 ppm. High resistivity was obtained and a procedure for contact preparation was developed. The mobility-lifetime product of the material was determined by both X-ray irradiation and photocurrent spectroscopy. The X-ray detector prepared with this material showed good spectroscopic characteristics. (literal)
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