Silicon epitaxy below 200°C: Towards thin crystalline solar cells (Abstract/Comunicazione in atti di convegno)

Type

• Prodotto della ricerca (Classe)
• Abstract/Comunicazione in atti di convegno (Classe)

Label

• Silicon epitaxy below 200°C: Towards thin crystalline solar cells (Abstract/Comunicazione in atti di convegno) (literal)

Anno

• 2012-01-01T00:00:00+01:00 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi

• 10.1117/12.929741 (literal)

Alternative label

• Cariou, Romain; Ruggeri, Rosa; Chatterjee, Parsathi; Gentner, Jean Louis; Roca I Cabarrocas, Pere (2012)
  Silicon epitaxy below 200°C: Towards thin crystalline solar cells
  in SPIE Thin Film Solar Technology IV; San Diego, CA;
  (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori

• Cariou, Romain; Ruggeri, Rosa; Chatterjee, Parsathi; Gentner, Jean Louis; Roca I Cabarrocas, Pere (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#url

• http://www.scopus.com/record/display.url?eid=2-s2.0-84872863580&origin=inward (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume

• 8470 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#volumeInCollana

• 8470 (literal)

Rivista

• Proceedings of SPIE, the International Society for Optical Engineering (Rivista)

Note

• Scopu (literal)
• Comunicazione (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni

• Ecole Polytechnique; CEA LETI; Universita degli Studi di Messina; Indian Association for the Cultivation of Science (literal)

Titolo

• Silicon epitaxy below 200°C: Towards thin crystalline solar cells (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#isbn

• 9780819491879 (literal)

Abstract

• Low temperature plasma processes provide a toolbox for etching, texturing and deposition of a wide range of materials. Here we present a bottom up approach to grow epitaxial crystalline silicon films (epi-Si) by standard RFPECVD at temperatures below 200°C. Booth structural and electronic properties of the epitaxial layers are investigated. Proof of high crystalline quality is deduced from spectroscopic ellipsometry and HRTEM measurements. Moreover, we build heterojunction solar cells with intrinsic epitaxial absorber thickness in the range of a few microns, grown at 175 °C on highly doped (100) substrates, in the wafer equivalent approach. Achievement of a fill factor as high as 80 % is a proof that excellent quality of epitaxial layers can be produced at such low temperatures. While 8.5 % conversion efficiency has already been achieved for a 3.4 ?m epitaxial silicon absorber, the possibility of reaching 15 % conversion efficiency with few microns epi-Si is discussed based on a detailed opto-electrical modeling of current devices. © 2012 SPIE. (literal)

Prodotto di

• Materiali e processi avanzati per celle fotovoltaiche (MD.P05.005.004) (Modulo)
• Institute for microelectronics and microsystems (IMM) (Istituto)

Autore CNR

• Rosa Ruggeri (Persona)

Insieme di parole chiave

• Parole chiave di "Silicon epitaxy below 200°C: Towards thin crystalline solar cells" (Insieme di parole chiave)

Incoming links:

Prodotto

• Institute for microelectronics and microsystems (IMM) (Istituto)
• Materiali e processi avanzati per celle fotovoltaiche (MD.P05.005.004) (Modulo)

Autore CNR di

• Rosa Ruggeri (Persona)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#rivistaDi

• Proceedings of SPIE, the International Society for Optical Engineering (Rivista)

Insieme di parole chiave di

• Parole chiave di "Silicon epitaxy below 200°C: Towards thin crystalline solar cells" (Insieme di parole chiave)