Synthesis and Investigation of New Materials in MIS Structures for the Development of Physical Foundations of CMOS Technologies of Nanoelectronics (Articolo in rivista)

Type

• Articolo in rivista (Classe)
• Prodotto della ricerca (Classe)

Label

• Synthesis and Investigation of New Materials in MIS Structures for the Development of Physical Foundations of CMOS Technologies of Nanoelectronics (Articolo in rivista) (literal)

Anno

• 2010-01-01T00:00:00+01:00 (literal)

Alternative label

• Zenkevich, A. V.; Lebedinskii, Yu. Yu.; Matveev, Yu. A.; Barantsev, N. S.; Voronov, Yu. A.; Sogoyan, A. V.; Nevolin, V. N.; Chichkov, V. I.; Spiga, S.; Fanchulli, M. (2010)
  Synthesis and Investigation of New Materials in MIS Structures for the Development of Physical Foundations of CMOS Technologies of Nanoelectronics
  in Russian microelectronics
  (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori

• Zenkevich, A. V.; Lebedinskii, Yu. Yu.; Matveev, Yu. A.; Barantsev, N. S.; Voronov, Yu. A.; Sogoyan, A. V.; Nevolin, V. N.; Chichkov, V. I.; Spiga, S.; Fanchulli, M. (literal)

Pagina inizio

• 165 (literal)

Pagina fine

• 174 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume

• 39 (literal)

Rivista

• Russian microelectronics (Rivista)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#pagineTotali

• 10 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroFascicolo

• 3 (literal)

Note

• ISI Web of Science (WOS) (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni

• Moscow Engn Phys Inst; State Tech Univ; CNR-INFM, Laboratorio MDM (literal)

Titolo

• Synthesis and Investigation of New Materials in MIS Structures for the Development of Physical Foundations of CMOS Technologies of Nanoelectronics (literal)

Abstract

• Certain results of experimental investigations of recent years devoted to new materials of undergate dielectrics and gates for field-effect MOS transistors based on high-k metal oxides and metal layers, respectively, are presented. The laboratory technology of fabrication of a functional field-effect transistor based on the TaN/LaAlO(3)/Si structure is described briefly. (literal)

Prodotto di

• Institute for microelectronics and microsystems (IMM) (Istituto)

Autore CNR

• SABINA SPIGA (Unità di personale interno)

Incoming links:

Autore CNR di

• SABINA SPIGA (Unità di personale interno)

Prodotto

• Institute for microelectronics and microsystems (IMM) (Istituto)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#rivistaDi

• Russian microelectronics (Rivista)