Experimental and simulation study of the program efficiency of HfO 2 based charge trapping memories (Contributo in atti di convegno)

Type

• Prodotto della ricerca (Classe)
• Contributo in atti di convegno (Classe)

Label

• Experimental and simulation study of the program efficiency of HfO 2 based charge trapping memories (Contributo in atti di convegno) (literal)

Anno

• 2010-01-01T00:00:00+01:00 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi

• 10.1109/ESSDERC.2010.5618194 (literal)

Alternative label

• Spiga, Sabina; Congedo, Gabriele; Russo, Ugo; Lamperti, Alessio; Salicio, Olivier; Driussi, Francesco; Vianello, Elisa (2010)
  Experimental and simulation study of the program efficiency of HfO 2 based charge trapping memories
  in European Solid State Device Research Conference, ESSDERC 2010, Siviglia
  (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori

• Spiga, Sabina; Congedo, Gabriele; Russo, Ugo; Lamperti, Alessio; Salicio, Olivier; Driussi, Francesco; Vianello, Elisa (literal)

Pagina inizio

• 408 (literal)

Pagina fine

• 411 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#url

• http://www.scopus.com/record/display.url?eid=2-s2.0-78649968139&origin=inward (literal)

Note

• Scopu (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni

• Laboratorio Nazionale MDM; Universita degli Studi di Udine (literal)

Titolo

• Experimental and simulation study of the program efficiency of HfO 2 based charge trapping memories (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#isbn

• 9781424466610 (literal)

Abstract

• This work addresses the use of HfO2 as trapping layer in TaN/Al2O3/HfO2/SiO2/Si (TAHOS) stacks for scaled non-volatile memories, by a complete characterization of the physical properties as a function of thermal budget and film thickness and of the program characteristics, with the aim of a benchmarking with the conventional Si3N4 (TANOS). The TAHOS stack withstands high temperature budget (>1000 °C) and shows similar program speed with respect to TANOS devices, thus revealing similar electron injection conditions. Moreover, the high dielectric constant of HfO2 allows for an efficient EOT scaling and/or a large physical thickness for an improved trapping efficiency. Modeling of program transients contributed to the understanding of the trapping in TANOS/TAHOS devices and to the identification of physical processes possibly limiting the gate stack scaling. (literal)
• [object Object] (literal)

Prodotto di

• Institute for microelectronics and microsystems (IMM) (Istituto)
• Materiali e dispositivi nanoscalati per applicazioni in memorie non-volatili, architetture neuromorfiche e neuroelettronica (MD.P05.024.001) (Modulo)

Autore CNR

• ALESSIO LAMPERTI (Unità di personale interno)
• SABINA SPIGA (Persona)

Insieme di parole chiave

• Keywords of "Experimental and simulation study of the program efficiency of HfO 2 based charge trapping memories" (Insieme di parole chiave)

Incoming links:

Autore CNR di

• SABINA SPIGA (Persona)
• ALESSIO LAMPERTI (Unità di personale interno)

Prodotto

• Institute for microelectronics and microsystems (IMM) (Istituto)
• Materiali e dispositivi nanoscalati per applicazioni in memorie non-volatili, architetture neuromorfiche e neuroelettronica (MD.P05.024.001) (Modulo)

Insieme di parole chiave di

• Keywords of "Experimental and simulation study of the program efficiency of HfO 2 based charge trapping memories" (Insieme di parole chiave)