Trimethylaluminum-Based Atomic Layer Deposition of MO2 (M= Zr, Hf) Gate Dielectrics on In0.53Ga0.47As(001) Substrates (Contributo in atti di convegno)

Type

• Contributo in atti di convegno (Classe)
• Prodotto della ricerca (Classe)

Label

• Trimethylaluminum-Based Atomic Layer Deposition of MO2 (M= Zr, Hf) Gate Dielectrics on In0.53Ga0.47As(001) Substrates (Contributo in atti di convegno) (literal)

Anno

• 2012-01-01T00:00:00+01:00 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi

• 10.1149/05013.0011ecst (literal)

Alternative label

• Molle, A.; Cianci, E.; Lamperti, A.; Wiemer, C.; Baldovino, S.; Lamagna, L.; Spiga, S.; Fanciulli, M.; Brammertz, G.; Merckling, C.; Caymax, M. (2012)
  Trimethylaluminum-Based Atomic Layer Deposition of MO2 (M= Zr, Hf) Gate Dielectrics on In0.53Ga0.47As(001) Substrates
  in ECS Meeting 2012
  (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori

• Molle, A.; Cianci, E.; Lamperti, A.; Wiemer, C.; Baldovino, S.; Lamagna, L.; Spiga, S.; Fanciulli, M.; Brammertz, G.; Merckling, C.; Caymax, M. (literal)

Pagina inizio

• 11 (literal)

Pagina fine

• 19 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume

• 50 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#volumeInCollana

• 50 (literal)

Rivista

• ECS transactions (Rivista)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#pagineTotali

• 9 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroFascicolo

• 13 (literal)

Note

• ISI Web of Science (WoS) (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni

• IMM CNR (literal)

Titolo

• Trimethylaluminum-Based Atomic Layer Deposition of MO2 (M= Zr, Hf) Gate Dielectrics on In0.53Ga0.47As(001) Substrates (literal)

Abstract

• As post-Si era for digital device is incipient, In0.53Ga0.47As is a good candidate among n-type active channels with high electron mobility but - unlike Si - it lacks a well-established technology for dielectric gating which may bear aggressive device scaling. Here we propose a viable route for the atomic layer deposition (ALD) of high-kappa dielectrics taking advantage from the well-known self-cleaning effect of the trimethylaluminum (TMA) precursor on the III-V compound surfaces. In this respect, the incorporation of Al2O3 cycles both as a pre-conditioning surface treatment and inside the ALD growth of a MO2 host matrix (M=Zr, Hf) is here investigated. Al:MO2/In0.53Ga0.47As heterojunctions have been scrutinized by in situ spectroscopic ellipsometry and ex situ chemical depth-profiling analysis which validate a good physical quality of the oxide and elucidate the effect of the pre-conditioning cycles at the interface level. The resulting MOS capacitors have been characterized by means of multifrequency capacitance-voltage measurements and conductance analysis therein yielding a permittivity of 19 +/- 1 both for Al:HfO2 and Al:ZrO2 and similar electrical quality of the interfaces. On the other hand, Al:HfO2 appears to be electrically more robust against leakage and endowed with a lower frequency dispersion in accumulation. (literal)

Prodotto di

• Institute for microelectronics and microsystems (IMM) (Istituto)

Autore CNR

• ELENA CIANCI (Persona)
• ALESSANDRO MOLLE (Persona)
• ALESSIO LAMPERTI (Unità di personale interno)
• SABINA SPIGA (Persona)
• CLAUDIA WIEMER (Unità di personale interno)
• MARCO FANCIULLI (Unità di personale esterno)

Incoming links:

Autore CNR di

• SABINA SPIGA (Persona)
• CLAUDIA WIEMER (Unità di personale interno)
• ALESSANDRO MOLLE (Persona)
• ELENA CIANCI (Persona)
• MARCO FANCIULLI (Unità di personale esterno)
• ALESSIO LAMPERTI (Unità di personale interno)

Prodotto

• Institute for microelectronics and microsystems (IMM) (Istituto)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#rivistaDi

• ECS transactions (Rivista)