Investigations on 40 MeV Li3+ ions irradiated GaN epilayers (Articolo in rivista)

Type
Label
  • Investigations on 40 MeV Li3+ ions irradiated GaN epilayers (Articolo in rivista) (literal)
Anno
  • 2008-01-01T00:00:00+01:00 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi
  • 10.1016/j.nimb.2008.01.070 (literal)
Alternative label
  • Suresh Kumar V.; Kumar J.; Kanjilal D.; Asokan K.; Mohanty T.; Tripathi A.; Rossi F.; Zappettini A.; Lazzarini L.; Ferrari C. (2008)
    Investigations on 40 MeV Li3+ ions irradiated GaN epilayers
    in Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms (Print); Elsevier Science Publishers B.V., North Holland (Paesi Bassi)
    (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
  • Suresh Kumar V.; Kumar J.; Kanjilal D.; Asokan K.; Mohanty T.; Tripathi A.; Rossi F.; Zappettini A.; Lazzarini L.; Ferrari C. (literal)
Pagina inizio
  • 1799 (literal)
Pagina fine
  • 1803 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#altreInformazioni
  • 18th International Conference on Ion Beam Analysis Location: Univ Hyderabad, Sch Phys, Hyderabad, INDIA, SEP 23-28, 2007 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#url
  • http://www.sciencedirect.com/science/article/pii/S0168583X08000967 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume
  • 266 (literal)
Rivista
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#note
  • In: Nuclear Instruments & Methods in Physics Research Section B-Beam Interactions With Materials and Atoms, vol. 266 pp. 1799 - 1803. Elsevier B.V, 2008. (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroFascicolo
  • 8 (literal)
Note
  • ISI Web of Science (WOS) (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
  • Crystal Growth Centre, Anna University, Madras-25, India, Inter-University Accelerator Centre, New Delhi 110 067, India, School of Physical Sciences, Jawaharlal Nehru University, New Delhi, India, CNR-IMEM, Parma (literal)
Titolo
  • Investigations on 40 MeV Li3+ ions irradiated GaN epilayers (literal)
Abstract
  • The Metal Organic Chemical Vapour Deposition (MOCVD) grown n-type Gallium nitride (GaN) layers on sapphire (0001) substrates have been irradiated at low and room temperatures with 40 MeV Li3+ ions at the fluence of 1 x 1013 ions cm-2. Irradiated samples were characterised by using X-ray diffraction (XRD), photoluminescence (PL), Raman spectroscopy and atomic force microscopy (AFM). XRD results show that the formation of Ga2O3 has been observed upon irradiation. This is due to interface mixing of GaN/ Al2O3, at both temperatures. Also the GaN (00 02) peak splits into two at low temperature irradiation. PL measurements show a yellow emission band shift towards blue band side upon irradiation at 77 K. Raman studies indicate that the lattice disorder is high at room temperature irradiation compared to low temperature irradiation. AFM images indicate the increasing surface roughness after ion irradiation at room temperature when compared to pristine GaN and low temperature irradiated GaN. These observations are discussed in detail with the use of complementary techniques. (literal)
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