Switching of nanosized filaments in NiO by conductive atomic force microscopy (Articolo in rivista)

Type

• Articolo in rivista (Classe)
• Prodotto della ricerca (Classe)

Label

• Switching of nanosized filaments in NiO by conductive atomic force microscopy (Articolo in rivista) (literal)

Anno

• 2012-01-01T00:00:00+01:00 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi

• 10.1063/1.4752032 (literal)

Alternative label

• Nardi, F.; Deleruyelle, D.; Spiga, S.; Muller, C.; Bouteille, B.; Ielmini, D. (2012)
  Switching of nanosized filaments in NiO by conductive atomic force microscopy
  in Journal of applied physics
  (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori

• Nardi, F.; Deleruyelle, D.; Spiga, S.; Muller, C.; Bouteille, B.; Ielmini, D. (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume

• 112 (literal)

Rivista

• Journal of applied physics (Rivista)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#pagineTotali

• 6 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroFascicolo

• 6 (literal)

Note

• ISI Web of Science (WOS) (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni

• Polytechnic University of Milan; IUNET; Centre National de la Recherche Scientifique (CNRS); Laboratorio MDM, IMM-CNR, via C. Olivetti 2, I-20864 Agrate Brianza (MB), Italy (literal)

Titolo

• Switching of nanosized filaments in NiO by conductive atomic force microscopy (literal)

Abstract

• Resistive switching in binary metal oxides consists of conductivity changes originating from the electrical creation/dissolution of conductive filaments (CFs) at nanoscale. The investigation of CF local properties can only be achieved through physical and electrical studies at the scale of 10 nm or less, that is, the characteristic size of CFs. This work reports on the direct manipulation of individual CFs formed through insulating NiO films by conductive atomic force microscopy (CAFM) and the comparison between forming/reset processes induced by CAFM and those observed in large-area devices with the same NiO film. The switching variability due to local defects, such as grain boundaries and dislocations, is directly evidenced by CAFM during electroforming process. Our results also indicate that the forming voltage under CAFM can be significantly smaller than the one observed in large-area devices, thus providing evidence for the electric-field enhancement underneath the CAFM tip. Filament deactivation, or reset, at extremely low currents close to 100 nA is demonstrated and described in terms of electrode-limited CF. These results suggest that device engineering and CF size limitation may allow for a significant reduction of forming voltage and reset current in resistive switching random-access memory switching. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4752032] (literal)

Prodotto di

• Institute for microelectronics and microsystems (IMM) (Istituto)
• Materiali e dispositivi nanoscalati per applicazioni in memorie non-volatili, architetture neuromorfiche e neuroelettronica (MD.P05.024.001) (Modulo)

Autore CNR

• SABINA SPIGA (Persona)

Insieme di parole chiave

• Parole chiave di "Switching of nanosized filaments in NiO by conductive atomic force microscopy" (Insieme di parole chiave)

Incoming links:

Autore CNR di

• SABINA SPIGA (Persona)

Prodotto

• Institute for microelectronics and microsystems (IMM) (Istituto)
• Materiali e dispositivi nanoscalati per applicazioni in memorie non-volatili, architetture neuromorfiche e neuroelettronica (MD.P05.024.001) (Modulo)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#rivistaDi

• Journal of applied physics (Rivista)

Insieme di parole chiave di

• Parole chiave di "Switching of nanosized filaments in NiO by conductive atomic force microscopy" (Insieme di parole chiave)