Homo and hetero epitaxy of Germanium using isobutylgermane (Articolo in rivista)

Type
Label
  • Homo and hetero epitaxy of Germanium using isobutylgermane (Articolo in rivista) (literal)
Anno
  • 2008-01-01T00:00:00+01:00 (literal)
Alternative label
  • Attolini G.; Bosi M.; Musayeva N.; Pelosi C.; Ferrari C.; Arumainathan S.; Timò G. (2008)
    Homo and hetero epitaxy of Germanium using isobutylgermane
    in Thin solid films (Print)
    (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
  • Attolini G.; Bosi M.; Musayeva N.; Pelosi C.; Ferrari C.; Arumainathan S.; Timò G. (literal)
Pagina inizio
  • 404 (literal)
Pagina fine
  • 406 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume
  • 517 (literal)
Rivista
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#note
  • In: Thin Solid Films, vol. 517 (1) pp. 404 - 406. Elsevier, 2008. (literal)
Note
  • ISI Web of Science (WOS) (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
  • CNR-IMEM, Parma, CESI Ricerca S.P.A., Via Rubattino 54, 20134 Milano, Italy (literal)
Titolo
  • Homo and hetero epitaxy of Germanium using isobutylgermane (literal)
Abstract
  • Nominally undoped Ge epitaxial layers were deposited on Ge and GaAs substrates by means of Metal-Organic Vapor Phase (MOVPE) using a novel Germanium source, isobutylgermane (iBuGe), by Rohm and Haas Electronic Materials LLC (USA). High Resolution X-ray Diffraction, Atomic Force Microscopy and Raman spectroscopy were combined to characterize the layers. Ge layers were deposited using AsH3 as a surfactant and several growth procedures were tested. The use of arsine reduced the growth rate and also significantly improved the epitaxial quality and surface roughness. (literal)
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