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Full encapsulated CdZnTe crystals by the vertical Bridgman method (Articolo in rivista)

Type

Label

Full encapsulated CdZnTe crystals by the vertical Bridgman method (Articolo in rivista) (literal)

Anno

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Alternative label

Zha M.; Zappettini A.; Calestani D.; Marchini L.; Zanotti L.; Paorici C. (2008)
Full encapsulated CdZnTe crystals by the vertical Bridgman method
in Journal of crystal growth
(literal)

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Zha M.; Zappettini A.; Calestani D.; Marchini L.; Zanotti L.; Paorici C. (literal)

Pagina inizio

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Rivista

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In: Journal of Crystal Growth, vol. 310 pp. 2072 - 2075. the Proceedings of the 15th International Conference on Crystal Growth (ICCG-15) in conjunction with the International Conference on Vapor Growth and Epitaxy and the US Biennial Workshop on Organometallic Vapor Phase Epitaxy Salt Lake City, Utah, US 12-17 August 2007 Edited by Tom F. Kuech, Susan E. Babcock, Rajaram Bhat and Catherine Caneau. Elsevier B.V, 2008. (literal)

Note

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CNR-IMEM, Parma, CNR-IMEM, Parma and Dipartimento di Fisica, Università di Parma (literal)

Titolo

Abstract

CdZnTe crystals were grown by the vertical Bridgman technique using boron oxide for preventing material decomposition. The experiments show that a boron oxide layer completely encapsulates the crystal during growth, so that the crystal grows without direct contact with the crucible. The origins of this effect are investigated. In this work it is shown that boron oxide and quartz create a mixing layer at high temperature. This layer explains the reason for the good wetting of the quartz crucible by boron oxide. (literal)

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