Graphene as transparent conducting layer for high temperature thin film device applications (Articolo in rivista)

Type
Label
  • Graphene as transparent conducting layer for high temperature thin film device applications (Articolo in rivista) (literal)
Anno
  • 2015-01-01T00:00:00+01:00 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi
  • 10.1016/j.solmat.2015.02.026 (literal)
Alternative label
  • G.P.Veronese, M.Allegrezza, M.Canino, E.Centurioni, L.Ortolani, R.Rizzoli, V. Morandi, C.Summonte (2015)
    Graphene as transparent conducting layer for high temperature thin film device applications
    in Solar energy materials and solar cells; Elsevier, Amsterdam (Paesi Bassi)
    (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
  • G.P.Veronese, M.Allegrezza, M.Canino, E.Centurioni, L.Ortolani, R.Rizzoli, V. Morandi, C.Summonte (literal)
Pagina inizio
  • 35 (literal)
Pagina fine
  • 40 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#url
  • http://www.sciencedirect.com/science/article/pii/S0927024815000872 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume
  • 138 (literal)
Rivista
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#pagineTotali
  • 6 (literal)
Note
  • ISI Web of Science (WOS) (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
  • IMM-CNR Bologna (literal)
Titolo
  • Graphene as transparent conducting layer for high temperature thin film device applications (literal)
Abstract
  • The use of graphene as transparent conducting layer in devices that require high temperature processing is proposed. The material shows stability upon thermal treatments up to 1100 °C ifc apped with a sacrificial silicon layer. The use of Cu foil or evaporated Cu as catalysts in Catalytic-Chemical Vapor Deposition growth gives rise to graphene ofs imilar properties, which represents a promising result in view of its direct integration in microelectronic devices. Photovoltaic p-i-n thin film devices were fab- ricated on the as-deposited or annealed graphene membranes and compared with similar devices that incorporate as-deposited Indium Tin Oxide. No degradation in series resistance is observed for the annealed device. A 3.7% and 2.8% photovoltaic conversion efficiency is observed on the devices fabricated on as-transferred and on annealed graphene respectively. The major limitation derives from the high sheet resistance of the as-transferred state-of-the-art material. The results opens the way to the use of graphene in applications that require transparent conducting layers resistant to high temperature pro- cessing. (literal)
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