http://www.cnr.it/ontology/cnr/individuo/prodotto/ID327097
Graphene as transparent conducting layer for high temperature thin film device applications (Articolo in rivista)
- Type
- Label
- Graphene as transparent conducting layer for high temperature thin film device applications (Articolo in rivista) (literal)
- Anno
- 2015-01-01T00:00:00+01:00 (literal)
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi
- 10.1016/j.solmat.2015.02.026 (literal)
- Alternative label
G.P.Veronese, M.Allegrezza, M.Canino, E.Centurioni, L.Ortolani, R.Rizzoli, V. Morandi, C.Summonte (2015)
Graphene as transparent conducting layer for high temperature thin film device applications
in Solar energy materials and solar cells; Elsevier, Amsterdam (Paesi Bassi)
(literal)
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
- G.P.Veronese, M.Allegrezza, M.Canino, E.Centurioni, L.Ortolani, R.Rizzoli, V. Morandi, C.Summonte (literal)
- Pagina inizio
- Pagina fine
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#url
- http://www.sciencedirect.com/science/article/pii/S0927024815000872 (literal)
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume
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- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#pagineTotali
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- ISI Web of Science (WOS) (literal)
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
- IMM-CNR Bologna (literal)
- Titolo
- Graphene as transparent conducting layer for high temperature thin film device applications (literal)
- Abstract
- The use of graphene as transparent conducting layer in devices that require high temperature processing
is proposed. The material shows stability upon thermal treatments up to 1100 °C ifc apped with a
sacrificial silicon layer. The use of Cu foil or evaporated Cu as catalysts in Catalytic-Chemical Vapor
Deposition growth gives rise to graphene ofs imilar properties, which represents a promising result in
view of its direct integration in microelectronic devices. Photovoltaic p-i-n thin film devices were fab-
ricated on the as-deposited or annealed graphene membranes and compared with similar devices that
incorporate as-deposited Indium Tin Oxide. No degradation in series resistance is observed for the
annealed device. A 3.7% and 2.8% photovoltaic conversion efficiency is observed on the devices fabricated
on as-transferred and on annealed graphene respectively. The major limitation derives from the high
sheet resistance of the as-transferred state-of-the-art material. The results opens the way to the use of
graphene in applications that require transparent conducting layers resistant to high temperature pro-
cessing. (literal)
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