Performance of semi-insulating GaAs-based radiation detectors: Role of key physical parameters of base materials (Articolo in rivista)

Type
Label
  • Performance of semi-insulating GaAs-based radiation detectors: Role of key physical parameters of base materials (Articolo in rivista) (literal)
Anno
  • 2007-01-01T00:00:00+01:00 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi
  • 10.1016/j.nima.2007.01.114 (literal)
Alternative label
  • Dubecky F. a; Ferrari C. b; Korytar D. a; Gombia E. a; Necas V. c (2007)
    Performance of semi-insulating GaAs-based radiation detectors: Role of key physical parameters of base materials
    in NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT; elsevier B.V., Amsterdam (Paesi Bassi)
    (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
  • Dubecky F. a; Ferrari C. b; Korytar D. a; Gombia E. a; Necas V. c (literal)
Pagina inizio
  • 27 (literal)
Pagina fine
  • 31 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume
  • 576 (literal)
Rivista
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroFascicolo
  • 1 (literal)
Note
  • ISI Web of Science (WOS) (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
  • a Institute of Electrical Engineering, Slovak Academy of Sciences, Dúbravská cesta 9, Bratislava, SK-841 04, Slovak Republic; b IMEM - CNR, Area delle Scienze, 37/A Fontanini, Parma, I-43010, Italy; c Faculty of Electrical Engineering and Information Technology, Slovak University of Technology, Ilkovicova 3, Bratislava, SK-812 19, Slovak Republic (literal)
Titolo
  • Performance of semi-insulating GaAs-based radiation detectors: Role of key physical parameters of base materials (literal)
Abstract
  • In this work, the requirements of detector-grade semiconductor materials for radiation detectors, applicable in X-ray digital radiology, are identified. The study includes 12 various bulk semi-insulating (SI) GaAs single crystals grown by LEC and VGF methods, undoped and Cr-doped, obtained from 8 different suppliers. Conductivity, Hall, GDMS (glow discharge mass spectrometry), EPD (etch pit density), S-EBIC (scanning electron beam induced current), X-ray and LST (laser scattering tomography) techniques are used for the bulk SI GaAs material evaluation. The radiation detectors fabricated on these SI GaAs single crystals have been characterized by capacitance methods and their performances have been evaluated from detected pulse height spectra of 57Co. The correlation between the physical characteristics of the base materials and the performance of the detectors is demonstrated and discussed. Key detector-grade SI GaAs parameters, useful formaterial evaluation, are identified. (literal)
Editore
Prodotto di
Autore CNR
Insieme di parole chiave

Incoming links:


Prodotto
Autore CNR di
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#rivistaDi
Editore di
Insieme di parole chiave di
data.CNR.it