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Boron Oxide Encapsulated Vertical Bridgman: a Method for Preventing Crystal-Crucible Contact in the CdZnTe Growth (Articolo in rivista)

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Boron Oxide Encapsulated Vertical Bridgman: a Method for Preventing Crystal-Crucible Contact in the CdZnTe Growth (Articolo in rivista) (literal)

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Zappettini A.; Zha M.; Pavesi M.; Zanichelli M.; Bissoli F.; Zanotti L.; Auricchio N.; Caroli E. (2007)
Boron Oxide Encapsulated Vertical Bridgman: a Method for Preventing Crystal-Crucible Contact in the CdZnTe Growth
in IEEE transactions on nuclear science; The Institute of Electrical and Electronics Engineers (IEEE), Piscataway (Stati Uniti d'America)
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Zappettini A.; Zha M.; Pavesi M.; Zanichelli M.; Bissoli F.; Zanotti L.; Auricchio N.; Caroli E. (literal)

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A. Zappettini, M. Zha, F. Bissoli, and L. Zanotti are with the IMEM-CNR, Parco Area delle Scienze 43100 Parma, Italy M. Pavesi and M. Zanichelli are with the IMEM-CNR, 43100 Parma, Italy and also with the Physics Department, University of Parma, I-43100 Parma, Italy N. Auricchio is with the Physics Department, Ferrara University, 44100 Ferrara, Italy and also with the ASF-Bologna (INAF), 40129 Bologna, Italy E. Caroli is with the INAF, 40129 Bologna, Italy (literal)

Titolo

Boron Oxide Encapsulated Vertical Bridgman: a Method for Preventing Crystal-Crucible Contact in the CdZnTe Growth (literal)

Abstract

One of the reasons for the formation of twins and grain boundaries during the CdZnTe (CZT) crystal growth is the crystal-crucible interaction, typical of the vertical Bridgman technique. Particularly detrimental seems to be the use of quartz crucibles that ease the sticking of the crystal to the crucible walls. Due to this reason, many authors suggest the use of graphite crucibles or of carbon coated quartz crucibles. In order to avoid the contact between the growing crystal and the crucible, it was proposed to opportunely control the wetting angle. However, it was shown that this is possible only under microgravity conditions or by imposing a pressure difference between the melt and the solidifying crystal. In this work, we show that it is possible to avoid the contact between the crystal and the crucible by interposing a thin liquid boron oxide layer. This condition can be obtained in a vertical Bridgman furnace by covering the polycrystalline charge with a boron oxide pellet. In this way, crystals with large single grains were obtained also in quartz crucibles. Moreover, the crystals show low dislocation density, as expected in the case of crystals grown without contact with the crucible. (literal)

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