http://www.cnr.it/ontology/cnr/individuo/prodotto/ID32585
Origin of the fluctuations in the luminescence emission in InGaN quantum wells (Articolo in rivista)
- Type
- Label
- Origin of the fluctuations in the luminescence emission in InGaN quantum wells (Articolo in rivista) (literal)
- Anno
- 2006-01-01T00:00:00+01:00 (literal)
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi
- 10.1016/j.mssp.2006.01.066 (literal)
- Alternative label
Martinez O. a, Jimenez J. a, Bosi M. b, Albrecht M. c, Fornari R. c, Cusco R. d, Artus L. d (2006)
Origin of the fluctuations in the luminescence emission in InGaN quantum wells
in Materials science in semiconductor processing; ELSEVIER SCI LTD, THE BOULEVARD, LANGFORD LANE, KIDLINGTON, OXFORD, OXON (Regno Unito)
(literal)
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
- Martinez O. a, Jimenez J. a, Bosi M. b, Albrecht M. c, Fornari R. c, Cusco R. d, Artus L. d (literal)
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- 11th International Conference on Defects - Recognition Imaging and Physics in Semiconductors (DRIP-XI)Sept. 13-19 in Beijing (China)
Edited by Professor Wang, Professor Yang and Dr. Qu (literal)
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume
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- a Física de la Materia Condensada, ETSII, 47011 Valladolid, Spain; b IMEM-CNR Institute, 43010 Fontanini, Parma, Italy; c Institute for Crystal Growth (IKZ), Max, Born Street 2, 12489 Berlin, Germany; d Institut Jaume Almera (CSIC), Lluis Sole i Sabaris s.n, 08028 Barcelona, Spain (literal)
- Titolo
- Origin of the fluctuations in the luminescence emission in InGaN quantum wells (literal)
- Abstract
- InGaN single quantum wells grown by metal organic vapour phase epitaxy were studied by spectrally resolved cathodoluminescence (CL) and transmission electron microscopy (TEM). Spatial fluctuations of the intensity and peak wavelength at submicrometric scale in the CL emission were observed. The correlation of CL data with structural analysis carried out by TEM shows that such fluctuations are related to threading dislocations that cross the full structure and modify In concentration and thereafter the piezoelectric field and the non-radiative recombination efficiency. (literal)
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