Competition between internal and heavy doping gettering options in epi-silicon (Articolo in rivista)

Type
Label
  • Competition between internal and heavy doping gettering options in epi-silicon (Articolo in rivista) (literal)
Anno
  • 2006-01-01T00:00:00+01:00 (literal)
Alternative label
  • Frigeri C., Gombia E., Motta A. (2006)
    Competition between internal and heavy doping gettering options in epi-silicon
    in Materials science in semiconductor processing
    (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
  • Frigeri C., Gombia E., Motta A. (literal)
Pagina inizio
  • 74 (literal)
Pagina fine
  • 77 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume
  • 9 (literal)
Rivista
Note
  • ISI Web of Science (WOS) (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
  • CNR-IMEM Institute, Parco Area delle Scienze 37/a, 43010 Parma (Italy) (literal)
Titolo
  • Competition between internal and heavy doping gettering options in epi-silicon (literal)
Abstract
  • By studying the competition between internal and p(+) gettering, it was possible to identify the unwanted contaminant and estimate its concentration in unintentionally contaminated Si epi-structures simultaneously submitted to both gettering options. The contaminant concentration in the thermally untreated samples was below the DLTS detectability limit. Stratigraphic DLTS on thermally treated samples and EBIC study of the internal gettering allowed to establish that the contaminant was Fe. The occurrence of internal gettering even in presence of p(+) gettering in p/p(+) epi-structures suggested that the initial Fe concentration could have been in the range similar to 1.5 x 10(9)-5.2 x 10(10) cm(-3). Internal gettering is effective in p(+) substrate because of the low onset temperature of p(+) gettering. (literal)
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