Surface segregation mechanisms in dielectric thin films (Articolo in rivista)

Type
Label
  • Surface segregation mechanisms in dielectric thin films (Articolo in rivista) (literal)
Anno
  • 2004-01-01T00:00:00+01:00 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi
  • 10.1080/10584580490460268 (literal)
Alternative label
  • Watts B.E. a; Leccabue F. a; Tallarida G. b; Ferrari S. b; Fanciulli M. b; Padeletti G. c (2004)
    Surface segregation mechanisms in dielectric thin films
    in Integrated ferroelectrics; Taylor & Francis Ltd., Abingdon (Regno Unito)
    (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
  • Watts B.E. a; Leccabue F. a; Tallarida G. b; Ferrari S. b; Fanciulli M. b; Padeletti G. c (literal)
Pagina inizio
  • 3 (literal)
Pagina fine
  • 11 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume
  • 62 (literal)
Rivista
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroFascicolo
  • 62 (literal)
Note
  • ISI Web of Science (WOS) (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
  • a Istituto IMEM/CNR, Viale delle Scienze 37a, I-43100 Panna, Italy; b INFM, Laboratorio MDM, Via C. Olivetti 2, I-20041 Agrate Brianza, Italy; c Istituto ISMN/CNR, Via Salaria Km.29,5, I-00016 Monterotondo Stazione (Roma), Italy (literal)
Titolo
  • Surface segregation mechanisms in dielectric thin films (literal)
Abstract
  • It is often assumed that evaporation causes lead and bismuth depletion at the surface of ferroelectric films. However, this is in contrast with evidence that shows surface enrichment of Pb and Bi. A segregation mechanism that is analogous to the diffusion processes observed during the oxidation of metals is described. The presence of an electrochemical potential is discussed, together with the implications on the electrical properties of ferroelectric films. (literal)
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