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ZT thin films produced by metal organic-chemical vapour deposition to be used as high-k dielectrics (Articolo in rivista)
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- Label
- ZT thin films produced by metal organic-chemical vapour deposition to be used as high-k dielectrics (Articolo in rivista) (literal)
- Anno
- 2004-01-01T00:00:00+01:00 (literal)
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi
- 10.1016/j.mseb.2003.10.058 (literal)
- Alternative label
G. Padeletti, A. Cusma, M. Viticoli, G.M. Ingo, A. Mezzi , B. Watts (2004)
ZT thin films produced by metal organic-chemical vapour deposition to be used as high-k dielectrics
in Materials science & engineering. B, Solid-state materials for advanced technology; ELSEVIER SCIENCE SA, PO BOX 564, 1001 LAUSANNE (Svizzera)
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- G. Padeletti, A. Cusma, M. Viticoli, G.M. Ingo, A. Mezzi , B. Watts (literal)
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- G. Padeletti [1], A. Cusmà [1], M. Viticoli [1], G.M. Ingo V, A. Mezzi [1], B. Watts [2]
[1] ISMN CNR, Area della Ricerca di Roma 1, via Salaria Km 29.3, 00015 Monterotondo, Rome, Italy
[2] IMEM CNR, Istituto Materiali Elettron & Magnetismo, I-43010 Parma, Italy (literal)
- Titolo
- ZT thin films produced by metal organic-chemical vapour deposition to be used as high-k dielectrics (literal)
- Abstract
- In this work the synthesis and characterisation of ZrxTi1-xO2 (ZT) grown via a non conventional MOCVD apparatus on both silicon and platinum coated substrates are described. The samples have been chemically, morphologically and structurally characterised by AFM, XRD, SEM + FEG and XPS. Also high and low frequencies electrical characterisation has been performed to evaluate a possible application of such materials as high-k dielectrics. (C) 2003 Elsevier B.V. All rights reserved. (literal)
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