Polarization field effects on the recombination dynamics in low In-content InGaN multi-quantum wells (Articolo in rivista)

Type

• Prodotto della ricerca (Classe)
• Articolo in rivista (Classe)

Label

• Polarization field effects on the recombination dynamics in low In-content InGaN multi-quantum wells (Articolo in rivista) (literal)

Anno

• 2004-01-01T00:00:00+01:00 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi

• 10.1016/j.spmi.2004.09.019 (literal)

Alternative label

• Armani N., Rossi F., Ferrari C., Lazzarini L., Vinattieri A., Colocci M., Reale A., Di Carlo A., Grillo V. (2004)
  Polarization field effects on the recombination dynamics in low In-content InGaN multi-quantum wells
  in Superlattices and microstructures
  (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori

• Armani N., Rossi F., Ferrari C., Lazzarini L., Vinattieri A., Colocci M., Reale A., Di Carlo A., Grillo V. (literal)

Pagina inizio

• 615 (literal)

Pagina fine

• 624 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume

• 36 (literal)

Rivista

• Superlattices and microstructures (Rivista)

Note

• ISI Web of Science (WOS) (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni

• CNR, IMEM Inst, I-43100 Parma, Italy Univ Florence, INFM, I-50019 Sesto Fiorentino, FI, Italy; Univ Florence, Dipartimento Fis, I-50019 Sesto Fiorentino, FI, Italy; Univ Florence, LENS, I-50019 Sesto Fiorentino, FI, Italy; Univ Roma Tor Vergata, INFM, I-00133 Rome, Italy; Univ Roma Tor Vergata, Dipartimento Ingn Elettron, I-00133 Rome, Italy; INFM, TASC, I-34012 Trieste, Italy (literal)

Titolo

• Polarization field effects on the recombination dynamics in low In-content InGaN multi-quantum wells (literal)

Abstract

• The interplay of polarization fields and free carrier screening in InxGa1-xN/GaN (0.03 < x < 0.07) multiple quantum wells is studied by combining photoluminescence (time-integrated and time-resolved) and cathodoluminescence studies, in an excitation density range from 108 to 1012 cm(-2) of generated e-h pairs. For such low In content, the quantum-confined Stark effect is verified to rule the recombination dynamics, while effects of carrier localization in potential fluctuations have a minor role. Efficient field screening is demonstrated in CL steady-state high-injection conditions and in PL time-resolved experiments at the maximum excitation density. Under recovered nearly flat band conditions, quantum confinement effects are revealed and a high and possibly composition-dependent bowing parameter is extrapolated. Information on radiative and non-radiative rates for carrier recombination in the wells is obtained, both from steady-state and from time-resolved experiments, modelling the carrier dynamics in the framework of a theoretical rate equation model, which calculates electronic states and recombination rates in the nanostructure by coupling complete self-consistent solutions of Schr6dinger and Poisson equations. (literal)

Prodotto di

• Istituto dei materiali per l'elettronica ed il magnetismo (IMEM) (Istituto)

Autore CNR

• CLAUDIO FERRARI (Unità di personale interno)
• VINCENZO GRILLO (Unità di personale esterno)
• LAURA LAZZARINI (Unità di personale interno)
• NICOLA ARMANI (Persona)
• FRANCESCA ROSSI (Persona)

Incoming links:

Prodotto

• Istituto dei materiali per l'elettronica ed il magnetismo (IMEM) (Istituto)

Autore CNR di

• CLAUDIO FERRARI (Unità di personale interno)
• LAURA LAZZARINI (Unità di personale interno)
• NICOLA ARMANI (Persona)
• FRANCESCA ROSSI (Persona)
• VINCENZO GRILLO (Unità di personale esterno)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#rivistaDi

• Superlattices and microstructures (Rivista)