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Study on the microstructural and overall disorder in hydrogenated amorphous silicon carbon films (Articolo in rivista)

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Study on the microstructural and overall disorder in hydrogenated amorphous silicon carbon films (Articolo in rivista) (literal)

Anno

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Ambrosone, G; Basa, DK; Coscia, U; Fathallah, M (2008)
Study on the microstructural and overall disorder in hydrogenated amorphous silicon carbon films
in Journal of applied physics
(literal)

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\"[Basa, D. K.] Utkal Univ, Dept Phys, Bhubaneswar 751004, Orissa, India; [Ambrosone, G.; Coscia, U.] Complesso Univ Monte S Angelo, Dipartimento Sci Fis, I-80126 Naples, Italy; [Ambrosone, G.] Complesso Univ Monte S Angelo, INFM, CNR, Unita Napoli, I-80126 Naples, Italy; [Coscia, U.] Complesso Univ Monte S Angelo, CNISM, Unita Napoli, I-80126 Naples, Italy; [Fathallah, M.] King Saud Univ, Coll Sci, Riyadh 11451, Saudi Arabia (literal)

Titolo

Study on the microstructural and overall disorder in hydrogenated amorphous silicon carbon films (literal)

Abstract

Hydrogenated amorphous silicon carbon alloy films of different carbon compositions were prepared by plasma enhanced chemical vapor deposition system using silane and methane with helium dilution and were characterized by structural and optical techniques to understand the microstructural and overall disorder in amorphous semiconductors. The study demonstrates that the increase of the microstructural disorder results in an increase in the overall disorder and the local defect density induced by carbon incorporation seems to dominate the overall defect structure of the network. (literal)

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