Room temperature visible photoluminescence of silicon nanocrystallites embedded in amorphous silicon carbide matrix (Articolo in rivista)

Type

• Articolo in rivista (Classe)
• Prodotto della ricerca (Classe)

Label

• Room temperature visible photoluminescence of silicon nanocrystallites embedded in amorphous silicon carbide matrix (Articolo in rivista) (literal)

Anno

• 2008-01-01T00:00:00+01:00 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi

• 10.1063/1.2844477 (literal)

Alternative label

• Coscia, U; Ambrosone, G; Basa, DK (2008)
  Room temperature visible photoluminescence of silicon nanocrystallites embedded in amorphous silicon carbide matrix
  in Journal of applied physics
  (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori

• Coscia, U; Ambrosone, G; Basa, DK (literal)

Pagina inizio

• 063507-1 (literal)

Pagina fine

• 063507-6 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume

• 103 (literal)

Rivista

• Journal of applied physics (Rivista)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#pagineTotali

• 6 (literal)

Note

• ISI Web of Science (WOS) (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni

• \"[Coscia, U.; Ambrosone, G.] Complesso Univ MSA, Dipartimento Sci Fisiche, I-80126 Naples, Italy; [Coscia, U.] Complesso Univ MSA, CNISM, I-80126 Naples, Italy; [Ambrosone, G.] Complesso Univ MSA, INFM, CNR, Unita Napoli, I-80126 Naples, Italy; [Basa, D. K.] Utkal Univ, Dept Phys, Bhubaneswar 751004, Orissa, India (literal)

Titolo

• Room temperature visible photoluminescence of silicon nanocrystallites embedded in amorphous silicon carbide matrix (literal)

Abstract

• The nanocrystalline silicon embedded in amorphous silicon carbide matrix was prepared by varying rf power in high vacuum plasma enhanced chemical vapor deposition system using silane methane gas mixture highly diluted in hydrogen. In this paper, we have studied the evolution of the structural, optical, and electrical properties of this material as a function of rf power. We have observed visible photoluminescence at room temperature and also have discussed the role played by the Si nanocrystallites and the amorphous silicon carbide matrix. The decrease of the nanocrystalline size, responsible for quantum confinement effect, facilitated by the amorphous silicon carbide matrix, is shown to be the primary cause for the increase in the PL intensity, blueshift of the PL peak position, decrease of the PL width (full width at half maximum) as well as the increase of the optical band gap and the decrease of the dark conductivity. (C) 2008 American Institute of Physics. (literal)

Prodotto di

• Fisica dei materiali nanostrutturati per sensori di gas (MD.P05.016.001) (Modulo)

Autore CNR

• Giuseppina Ambrosone (Persona)

Insieme di parole chiave

• Parole chiave di "Room temperature visible photoluminescence of silicon nanocrystallites embedded in amorphous silicon carbide matrix" (Insieme di parole chiave)

Incoming links:

Autore CNR di

• Giuseppina Ambrosone (Persona)

Prodotto

• Fisica dei materiali nanostrutturati per sensori di gas (MD.P05.016.001) (Modulo)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#rivistaDi

• Journal of applied physics (Rivista)

Insieme di parole chiave di

• Parole chiave di "Room temperature visible photoluminescence of silicon nanocrystallites embedded in amorphous silicon carbide matrix" (Insieme di parole chiave)