Hydrogen-induced surface metallization of beta-SiC(100)-(3 x 2) revisited by Density Functional Theory calculations (Articolo in rivista)

Type
Label
  • Hydrogen-induced surface metallization of beta-SiC(100)-(3 x 2) revisited by Density Functional Theory calculations (Articolo in rivista) (literal)
Anno
  • 2005-01-01T00:00:00+01:00 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi
  • 10.1103/PhysRevLett.116103 (literal)
Alternative label
  • Di Felice R. a; Bertoni C.M. a; Pignedoli C.A. a; Catellani A. ab (2005)
    Hydrogen-induced surface metallization of beta-SiC(100)-(3 x 2) revisited by Density Functional Theory calculations
    in Physical review letters (Print); American Physical Society (APS), College Pk (Stati Uniti d'America)
    (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
  • Di Felice R. a; Bertoni C.M. a; Pignedoli C.A. a; Catellani A. ab (literal)
Pagina inizio
  • 116103-1 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume
  • 94 (literal)
Rivista
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#pagineTotali
  • 4 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroFascicolo
  • 11 (literal)
Note
  • ISI Web of Science (WOS) (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
  • a Univ Modena & Reggio Emilia, Dipartimento Fis, INFM S3, Natl Ctr NanoStruct & BioSyst Surfaces, I-41100 Modena, Italy; b IMEM, CNR, I-43010 Parma, Italy (literal)
Titolo
  • Hydrogen-induced surface metallization of beta-SiC(100)-(3 x 2) revisited by Density Functional Theory calculations (literal)
Abstract
  • Recent experiments on the silicon terminated (3x2)-SiC(100) surface indicated an unexpected metallic character upon hydrogen adsorption. This effect was attributed to the bonding of hydrogen to a row of Si atoms and to the stabilization of a neighboring dangling bond row. Here, on the basis of density-functional calculations, we show that multiple-layer adsorption of H at the reconstructed surface is compatible with a different geometry: in addition to saturating the topmost Si dangling bonds, H atoms are adsorbed at rather unusual sites, i.e., stable bridge positions above third-layer Si dimers. The results thus suggest an alternative interpretation for the electronic structure of the metallic surface. (literal)
Editore
Prodotto di
Autore CNR
Insieme di parole chiave

Incoming links:


Prodotto
Autore CNR di
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#rivistaDi
Editore di
Insieme di parole chiave di
data.CNR.it