Electronic structure trends in the Srn+1RunO3n+1 family (n=1,2,3) (Articolo in rivista)

Type
Label
  • Electronic structure trends in the Srn+1RunO3n+1 family (n=1,2,3) (Articolo in rivista) (literal)
Anno
  • 2011-01-01T00:00:00+01:00 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi
  • 10.1103/PhysRevB.83.165121 (literal)
Alternative label
  • Malvestuto, M.; Carleschi, E.; Fittipaldi, R.; Gorelov, E.; Pavarini, E.; Cuoco, M.; Maeno, Y.; Parmigiani, F.; Vecchione, A. (2011)
    Electronic structure trends in the Srn+1RunO3n+1 family (n=1,2,3)
    in Physical review. B, Condensed matter and materials physics
    (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
  • Malvestuto, M.; Carleschi, E.; Fittipaldi, R.; Gorelov, E.; Pavarini, E.; Cuoco, M.; Maeno, Y.; Parmigiani, F.; Vecchione, A. (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume
  • 83 (literal)
Rivista
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  • 5 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroFascicolo
  • 16 (literal)
Note
  • ISI Web of Science (WOS) (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
  • Sincrotrone Trieste; CNR IOM; University of Trieste; CNR SPIN; University of Salerno; Julich Research Center; Julich Research Center; Kyoto University (literal)
Titolo
  • Electronic structure trends in the Srn+1RunO3n+1 family (n=1,2,3) (literal)
Abstract
  • The identification of electronic states and the analysis of their evolution with n is key to understanding n-layered ruthenates. To this end, we combine polarization-dependent O 1s x-ray absorption spectroscopy, high-purity Srn+1RunO3n+1 (n = 1,2,3) single crystals, and ab initio and many-body calculations. We find that the energy splitting between the empty x(2) - y(2) and 3z(2) - 1 state is considerably smaller than previously suggested and that, remarkably, Sr bands are essential to understanding the spectra. At low energy, we identify the main difference among the materials with a substantial rearrangement of t(2g) orbital occupations with increasing n. This rearrangement is controlled by the interplay of Coulomb repulsion, dimensionality, and changes in the t(2g) crystal field. (literal)
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