Characterization of homoepitaxial germanium p-n junctions for photovoltaic and thermophotovoltaic applications (Articolo in rivista)

Type
Label
  • Characterization of homoepitaxial germanium p-n junctions for photovoltaic and thermophotovoltaic applications (Articolo in rivista) (literal)
Anno
  • 2008-01-01T00:00:00+01:00 (literal)
Alternative label
  • Ferrari C.; Bosi M.; Attolini G.; Frigeri C.; Gombia E.; Pelosi C.; Arumainathan S.; Musayeva N. (2008)
    Characterization of homoepitaxial germanium p-n junctions for photovoltaic and thermophotovoltaic applications
    in Proceedings of the IEEE
    (literal)
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  • Ferrari C.; Bosi M.; Attolini G.; Frigeri C.; Gombia E.; Pelosi C.; Arumainathan S.; Musayeva N. (literal)
Pagina inizio
  • 307 (literal)
Pagina fine
  • 310 (literal)
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  • ASDAM (literal)
Rivista
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  • In: Proceedings of the Ieee, vol. ASDAM 2008 pp. 307 - 310. Institute of Electrical and Electronics Engineeres, Inc, 2008. (literal)
Note
  • ISI Web of Science (WOS) (literal)
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  • CNR-IMEM, Parma, Department of Nuclear Physics, Guindi Campus, Chennai 600025 India, Institute of Physics, Azerbaijan National Academy of Sciences, AZ-1143, Baku, Azerbaijan (literal)
Titolo
  • Characterization of homoepitaxial germanium p-n junctions for photovoltaic and thermophotovoltaic applications (literal)
Abstract
  • In the present work we report the results of characterization of epitaxial Ge/Ge layers using vapour phase epitaxy using either only isobutilgermane as a precursor or adding doses of AsH3 as surfactant to obtain a better surface morphology. When iBuGe partial pressure was below 4×10-6, the Ge layers showed good morphology and crystallographic quality with best results on samples grown on exactly oriented (001) Ge substrates. The use AsH3 as surfactant permitted to increase the iBuGe partial pressure used in the growth without degrading the layer properties, even if TEM revealed the presence of an high defect density at the interface. It was concluded that the surfactant, even if reported as (literal)
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