The effects of baking cycles on the properties of ferroelectric thin films (Articolo in rivista)

Type
Label
  • The effects of baking cycles on the properties of ferroelectric thin films (Articolo in rivista) (literal)
Anno
  • 2003-01-01T00:00:00+01:00 (literal)
Alternative label
  • Watts B.E., Leccabue F., Fanciulli M., Ferrari S., Tallarida G. (2003)
    The effects of baking cycles on the properties of ferroelectric thin films
    in Materials science in semiconductor processing
    (literal)
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  • Watts B.E., Leccabue F., Fanciulli M., Ferrari S., Tallarida G. (literal)
Pagina inizio
  • 147 (literal)
Pagina fine
  • 152 (literal)
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  • 5 (literal)
Rivista
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  • Presentazione su invito a MRS conference. Prima presentazione di fenomeni di segregazione nei film ferroelettrici. Questi effetti sono particolarmente influenti sulle proprietè elettriche di film sottili ferroelettrici e materiali dielettrici. (literal)
Note
  • ISI Web of Science (WOS) (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
  • 1 IMEM-CNR, Parma; 2 INFM, Laboratorio MDM, Agrate Brianza; (literal)
Titolo
  • The effects of baking cycles on the properties of ferroelectric thin films (literal)
Abstract
  • Sol gel methods are the most popular and successful means of producing ferroelectric thin films of compounds such as Pb(Ti,Zr)O3 and SrBi2Ta2O9. The heat treatment temperatures used to form the crystalline films are characterised by a low-temperature pyrolysis step, generally below 400°C followed by crystallisation and annealing between 600°C and 800°C. In this paper the effects of baking on the thin gel film will be presented and discussed.The method chosen to evaporate the solvent and eliminate organic ligands influences the morphology, chemistry and electrical properties of thin films profoundly. The atmosphere and heating rate, particularly, have been found to change the oxidation state of the metallic species in the film. A mechanism that explains the formation of Bi2O3 and PbO layers on the surface and the commonly observed depletion of these oxides in ferroelectric thin films is given. (literal)
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