Cathodoluminescence characterization of dislocations in gallium nitride using a transmission electron microscope (Articolo in rivista)

Type
Label
  • Cathodoluminescence characterization of dislocations in gallium nitride using a transmission electron microscope (Articolo in rivista) (literal)
Anno
  • 2003-01-01T00:00:00+01:00 (literal)
Alternative label
  • Yamamoto N., Itoh H., Grillo V., Chichibu S.F., Keller S., Speck J.S., DenBaars S.P., Mishra U.K., Nakamura S., Salviati G. (2003)
    Cathodoluminescence characterization of dislocations in gallium nitride using a transmission electron microscope
    in Journal of applied physics
    (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
  • Yamamoto N., Itoh H., Grillo V., Chichibu S.F., Keller S., Speck J.S., DenBaars S.P., Mishra U.K., Nakamura S., Salviati G. (literal)
Pagina inizio
  • 4315 (literal)
Pagina fine
  • 4319 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume
  • 94 (literal)
Rivista
Note
  • ISI Web of Science (WOS) (literal)
Titolo
  • Cathodoluminescence characterization of dislocations in gallium nitride using a transmission electron microscope (literal)
Abstract
  • Cathodoluminescence technique combined with transmission electron microscopy ~TEM-CL! has been used to characterize optical properties of dislocations in GaN epilayers. The dislocations act as nonradiative centers with different recombination rates. TEM-CL observation showed that even for the same Burgers vector of a, the dislocations show different electrical activity depending on the direction of dislocation line, i.e., the edge-type dislocation parallel to the c plane is very active, while the screw-type one is less active. The simulation of the CL images gives us the information of parameters such as carrier lifetime and diffusion length. (literal)
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