Combined HREM and theoretical analysis of SiC/Si interface (Articolo in rivista)

Type
Label
  • Combined HREM and theoretical analysis of SiC/Si interface (Articolo in rivista) (literal)
Anno
  • 2003-01-01T00:00:00+01:00 (literal)
Alternative label
  • Grillo V., Frabboni S., Cicero G., Savini G., Catellani A. (2003)
    Combined HREM and theoretical analysis of SiC/Si interface
    in Institute of physics conference series
    (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
  • Grillo V., Frabboni S., Cicero G., Savini G., Catellani A. (literal)
Pagina inizio
  • 69 (literal)
Pagina fine
  • 72 (literal)
Rivista
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#note
  • Source: MICROSCOPY OF SEMICONDUCTING MATERIALS 2003 Issue: 180 Pages: 69-72 Published: 2003 (literal)
Note
  • ISI Web of Science (WOS) (literal)
Titolo
  • Combined HREM and theoretical analysis of SiC/Si interface (literal)
Abstract
  • We performed molecular dynamics simulations to study the atomic structure of the β-SiC/Si(001) and (111) interfaces. The wide lattice mismatch between the two materials (~ 20%) introduces an array of misfit dislocations along the interface, responsible for releasing almost all the strain which would be present in a pseudomorphic structure. The interface termination, its stoichiometry and the core dislocation structures are here discussed; for the most stable heterostructures, the simulated HREM images are presented, and the features connected to the peculiar interface reconstructions evidenced. (literal)
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