Controlled intrinsic carbon doping in MOVPE-grown GaAs layers by using TMGa and TBAs (Articolo in rivista)

Type
Label
  • Controlled intrinsic carbon doping in MOVPE-grown GaAs layers by using TMGa and TBAs (Articolo in rivista) (literal)
Anno
  • 2003-01-01T00:00:00+01:00 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi
  • 10.1016/S0022-0248(02)01846-8 (literal)
Alternative label
  • M. Longo a; R. Magnanini a; A. Parisini a; L. Tarricone a; A. Carbognani a; C. Bocchi b; E. Gombia b (2003)
    Controlled intrinsic carbon doping in MOVPE-grown GaAs layers by using TMGa and TBAs
    in Journal of crystal growth
    (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
  • M. Longo a; R. Magnanini a; A. Parisini a; L. Tarricone a; A. Carbognani a; C. Bocchi b; E. Gombia b (literal)
Pagina inizio
  • 119 (literal)
Pagina fine
  • 123 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume
  • 248 (literal)
Rivista
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  • 5 (literal)
Note
  • ISI Web of Science (WOS) (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
  • a Istituto Nazionale di Fisica della Materia, Dipartimento di Fisica, Universit \" a di Parma, Parco Area delle Scienze 7A, 43100, Parma, Italy b Istituto IMEM-CNR, Parco Area delle Scienze 37a, 43010, Parma, Italy (literal)
Titolo
  • Controlled intrinsic carbon doping in MOVPE-grown GaAs layers by using TMGa and TBAs (literal)
Abstract
  • Homoepitaxial GaAs layers were grown by low-pressure metalorganic vapor phase epitaxy (MOVPE), by using the metalorganic precursors trimethylgallium (TMGa) and the low-toxicity, low-dissociation-temperature tertiary-butylarsine (TBAs), in order to exploit the phenomenon of controlled intrinsic carbon doping. Low-temperature photoluminescence, Hall effect and capacitance-voltage measurements were performed on the grown samples. The intrinsic carbon doping was studied as a function of: (i) the growth temperature (ranging between 5001C and 6401C), (ii) the V/III precursor ratio in the vapour phase (ranging between 1 and 25) and (iii) the influence of GaAs substrate misorientation (01 and 21off toward 110). Although a reduced carbon incorporation rate was expected by using TBAs, which is a benefit in obtaininghig h purity GaAs, intrinsically p-doped GaAs layers with a hole concentrations up to 6.51018 cm3 and a correspondingRT mobility in the range (100-400) cm2/V s were obtained. (literal)
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