Study of electrically active defects in GaAs/InAs/GaAs QDs structures by DLTS and TEM (Articolo in rivista)

Type
Label
  • Study of electrically active defects in GaAs/InAs/GaAs QDs structures by DLTS and TEM (Articolo in rivista) (literal)
Anno
  • 2006-01-01T00:00:00+01:00 (literal)
Alternative label
  • Prezioso M., Gombia E., Mosca R., Nasi L., Motta A., Frigeri P.,Trevisi G., Seravalli L., Franchi S. (2006)
    Study of electrically active defects in GaAs/InAs/GaAs QDs structures by DLTS and TEM
    in Proceedings of the IEEE
    (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
  • Prezioso M., Gombia E., Mosca R., Nasi L., Motta A., Frigeri P.,Trevisi G., Seravalli L., Franchi S. (literal)
Pagina inizio
  • 237 (literal)
Pagina fine
  • 240 (literal)
Rivista
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#note
  • International Conference on Advanced Semiconductor Devices and Microsystems, 2006 (ASDAM '06), Smolenice, Slovakia (literal)
Note
  • ISI Web of Science (WOS) (literal)
Titolo
  • Study of electrically active defects in GaAs/InAs/GaAs QDs structures by DLTS and TEM (literal)
Prodotto di
Autore CNR

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