http://www.cnr.it/ontology/cnr/individuo/prodotto/ID32260
Study of electrically active defects in GaAs/InAs/GaAs QDs structures by DLTS and TEM (Articolo in rivista)
- Type
- Label
- Study of electrically active defects in GaAs/InAs/GaAs QDs structures by DLTS and TEM (Articolo in rivista) (literal)
- Anno
- 2006-01-01T00:00:00+01:00 (literal)
- Alternative label
Prezioso M., Gombia E., Mosca R., Nasi L., Motta A., Frigeri P.,Trevisi G., Seravalli L., Franchi S. (2006)
Study of electrically active defects in GaAs/InAs/GaAs QDs structures by DLTS and TEM
in Proceedings of the IEEE
(literal)
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
- Prezioso M., Gombia E., Mosca R., Nasi L., Motta A., Frigeri P.,Trevisi G., Seravalli L., Franchi S. (literal)
- Pagina inizio
- Pagina fine
- Rivista
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#note
- International Conference on Advanced Semiconductor Devices and Microsystems, 2006 (ASDAM '06), Smolenice, Slovakia (literal)
- Note
- ISI Web of Science (WOS) (literal)
- Titolo
- Study of electrically active defects in GaAs/InAs/GaAs QDs structures by DLTS and TEM (literal)
- Prodotto di
- Autore CNR
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- Prodotto
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#rivistaDi