Fabrication of submicron-scale srtio3- devices by an atomic force microscope (Articolo in rivista)

Type
Label
  • Fabrication of submicron-scale srtio3- devices by an atomic force microscope (Articolo in rivista) (literal)
Anno
  • 2002-01-01T00:00:00+01:00 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi
  • 10.1063/1.1521583 (literal)
Alternative label
  • Pellegrino L., Pallecchi I., Marre D., Bellingeri E., Siri A.S. (2002)
    Fabrication of submicron-scale srtio3- devices by an atomic force microscope
    in Applied physics letters
    (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
  • Pellegrino L., Pallecchi I., Marre D., Bellingeri E., Siri A.S. (literal)
Pagina inizio
  • 3849 (literal)
Pagina fine
  • 3851 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume
  • 81 (literal)
Rivista
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#pagineTotali
  • 3 (literal)
Note
  • Scopu (literal)
  • ISI Web of Science (WOS) (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
  • INFM-LAMIA, Dipartimento di Fisica, via Dodecaneso 33, 16146 Genova, Italy (literal)
Titolo
  • Fabrication of submicron-scale srtio3- devices by an atomic force microscope (literal)
Abstract
  • Atomic force microscopy was used for the fabrication of submicron-scale SrTiO3-? devices. As compared to the as-grown films, the modified regions show different electrical and structural properties which can be used to develop submicrometer circuits. A 400 nm wide sidegate field gate effect transistor was reported which has a resistance modulation of 4% with gate electric fields of 1MV/cm. (literal)
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