High aspect ratio PS-b-PMMA block copolymer masks for lithographic applications. (Articolo in rivista)

Type

• Articolo in rivista (Classe)
• Prodotto della ricerca (Classe)

Label

• High aspect ratio PS-b-PMMA block copolymer masks for lithographic applications. (Articolo in rivista) (literal)

Anno

• 2014-01-01T00:00:00+01:00 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi

• 10.1021/am506391n (literal)

Alternative label

• Ferrarese Lupi, F; Giammaria, T J; Volpe, F G; Lotto, F; Seguini, G; Pivac, B; Laus, M; Perego, M (2014)
  High aspect ratio PS-b-PMMA block copolymer masks for lithographic applications.
  in ACS applied materials & interfaces (Online)
  (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori

• Ferrarese Lupi, F; Giammaria, T J; Volpe, F G; Lotto, F; Seguini, G; Pivac, B; Laus, M; Perego, M (literal)

Pagina inizio

• 21389 (literal)

Pagina fine

• 96 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume

• 6 (literal)

Rivista

• ACS applied materials & interfaces (Rivista)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroFascicolo

• 23 (literal)

Note

• ISI Web of Science (WOS) (literal)
• ISI Web of Science (WoS) (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni

• Laboratorio MDM, IMM-CNR , Via C. Olivetti 2, 20864 Agrate Brianza, Monza and Brianza, Italy. (literal)

Titolo

• High aspect ratio PS-b-PMMA block copolymer masks for lithographic applications. (literal)

Abstract

• The control of the self-assembly (SA) process and nanostructure orientation in diblock copolymer (DBC) thick films is a crucial technological issue. Perpendicular orientation of the nanostructures in symmetric and asymmetric poly(styrene)-b-poly(methyl methacrylate) (PS-b-PMMA) block copolymer films obtained by means of simple thermal treatments was demonstrated to occur in well-defined thickness windows featuring modest maximum values, thus resulting in low aspect ratio (h/d < 2) of the final lithographic mask. In this manuscript, the thickness window corresponding to the perpendicular orientation of the cylindrical structures in asymmetric DBC is investigated at high temperatures (190 °C <= T <= 310 °C) using a rapid thermal processing machine. A systematic study of the annealing conditions (temperature and time) of asymmetric PS-b-PMMA (Mn = 67.1, polydispersity index = 1.09) films, with thicknesses ranging from 10 to 400 nm, allowed ordered patterns, with a maximum value of orientational correlation length of 350 nm, to be obtained for film thicknesses up to 200 nm. The complete propagation of the cylindrical structures through the whole film thickness in a high aspect ratio PS template (h/d 7) is probed by lift-off process. Si nanopillars are obtained having the same lateral ordering and characteristic dimensions of the DBC lithographic mask as further confirmed by grazing-incidence small-angle X-ray scattering experiments. (literal)

Prodotto di

• Institute for microelectronics and microsystems (IMM) (Istituto)

Autore CNR

• GABRIELE SEGUINI (Unità di personale interno)
• MICHELE PEREGO (Unità di personale interno)

Incoming links:

Prodotto

• Institute for microelectronics and microsystems (IMM) (Istituto)

Autore CNR di

• MICHELE PEREGO (Unità di personale interno)
• GABRIELE SEGUINI (Unità di personale interno)
• http://www.cnr.it/ontology/cnr/individuo/unitaDiPersonaleEsterno/ID22981
• http://www.cnr.it/ontology/cnr/individuo/unitaDiPersonaleEsterno/ID22880
• http://www.cnr.it/ontology/cnr/individuo/unitaDiPersonaleEsterno/ID22872

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#rivistaDi

• ACS applied materials & interfaces (Rivista)