ToF-SIMS study of phosphorus diffusion in low-dimensional silicon structures (Articolo in rivista)

Type

• Articolo in rivista (Classe)
• Prodotto della ricerca (Classe)

Label

• ToF-SIMS study of phosphorus diffusion in low-dimensional silicon structures (Articolo in rivista) (literal)

Anno

• 2013-01-01T00:00:00+01:00 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi

• 10.1002/sia.5001 (literal)

Alternative label

• Perego, Michele; Seguini, Gabriele; Fanciulli, Marco (2013)
  ToF-SIMS study of phosphorus diffusion in low-dimensional silicon structures
  in SIA. Surface and interface analysis
  (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori

• Perego, Michele; Seguini, Gabriele; Fanciulli, Marco (literal)

Pagina inizio

• 386 (literal)

Pagina fine

• 389 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume

• 45 (literal)

Rivista

• SIA. Surface and interface analysis (Rivista)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#pagineTotali

• 4 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroFascicolo

• 1 (literal)

Note

• ISI Web of Science (WoS) (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni

• IMM CNR; University of Milano-Bicocca (literal)

Titolo

• ToF-SIMS study of phosphorus diffusion in low-dimensional silicon structures (literal)

Abstract

• Doping of Si nanocrystals is expected to be crucial in order to tailor the properties of these nanostructures and to implement their technological applications. In this work, phosphosilicate ultra-thin films (P delta-layers) were buried in an SiO/SiO2 multilayer structure, and the redistribution of P atoms during high-temperature (800-1100 degrees C) thermal treatments was studied by means of ToF-SIMS depth profiling. We demonstrated that the presence of the surrounding SiO2 matrix provides a strong barrier to P diffusion and, for temperatures equal or above 1000 degrees C, induces P segregation in the SiO regions, where two-dimensional layers of Si nanocrystals are formed during the thermal treatment. Such an effect is qualitatively in agreement with the P diffusivity data reported in the literature. The amount of P atoms incorporated in the Si nanocrystal region is directly controlled through a limited source process by properly adjusting the thickness of the P delta-layer interposed between the SiO and SiO2 films. Copyright (C) 2012 John Wiley & Sons, Ltd. (literal)

Prodotto di

• Institute for microelectronics and microsystems (IMM) (Istituto)

Autore CNR

• GABRIELE SEGUINI (Unità di personale interno)
• MARCO FANCIULLI (Unità di personale esterno)
• MICHELE PEREGO (Unità di personale interno)

Insieme di parole chiave

• Parole chiave di "ToF-SIMS study of phosphorus diffusion in low-dimensional silicon structures" (Insieme di parole chiave)

Incoming links:

Prodotto

• Institute for microelectronics and microsystems (IMM) (Istituto)

Autore CNR di

• MICHELE PEREGO (Unità di personale interno)
• MARCO FANCIULLI (Unità di personale esterno)
• GABRIELE SEGUINI (Unità di personale interno)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#rivistaDi

• SIA. Surface and interface analysis (Rivista)

Insieme di parole chiave di

• Parole chiave di "ToF-SIMS study of phosphorus diffusion in low-dimensional silicon structures" (Insieme di parole chiave)