Semiconductor Processing: Novel Hybrid Organic-Inorganic Spin-on Resist for Electron- or Photon-Based Nanolithography with Outstanding Resistance to Dry Etching (Adv. Mater. 43/2013). (Articolo in rivista)

Type

• Prodotto della ricerca (Classe)
• Articolo in rivista (Classe)

Label

• Semiconductor Processing: Novel Hybrid Organic-Inorganic Spin-on Resist for Electron- or Photon-Based Nanolithography with Outstanding Resistance to Dry Etching (Adv. Mater. 43/2013). (Articolo in rivista) (literal)

Anno

• 2013-01-01T00:00:00+01:00 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi

• 10.1002/adma.201370271 (literal)

Alternative label

• Zanchetta, Erika; Giustina, Gioia Della; Grenci, Gianluca; Pozzato, Alessandro; Tormen, Massimo; Brusatin, Giovanna (2013)
  Semiconductor Processing: Novel Hybrid Organic-Inorganic Spin-on Resist for Electron- or Photon-Based Nanolithography with Outstanding Resistance to Dry Etching (Adv. Mater. 43/2013).
  in Advanced materials (Weinh., Print)
  (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori

• Zanchetta, Erika; Giustina, Gioia Della; Grenci, Gianluca; Pozzato, Alessandro; Tormen, Massimo; Brusatin, Giovanna (literal)

Pagina inizio

• 6304 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume

• 25 (literal)

Rivista

• Advanced materials (Rivista)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroFascicolo

• 43 (literal)

Note

• ISI Web of Science (WOS) (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni

• [Zanchetta, Erika; Della Giustina, Gioia; Brusatin, Giovanna] Dept Ind Engn, I-35131 Padua, Italy; [Zanchetta, Erika; Della Giustina, Gioia; Brusatin, Giovanna] INSTM, I-35131 Padua, Italy; [Grenci, Gianluca; Pozzato, Alessandro; Tormen, Massimo] CNR IOM, Lab TASC, LILIT Beam Line, I-34149 Trieste, Italy (literal)

Titolo

• Semiconductor Processing: Novel Hybrid Organic-Inorganic Spin-on Resist for Electron- or Photon-Based Nanolithography with Outstanding Resistance to Dry Etching (Adv. Mater. 43/2013). (literal)

Abstract

• A new, unique spin-on metal-organic resist presenting a combination of worthwhile properties is described by Giovanna Brusatin and co-workers on page 6261. The resist shows good processability, typical of polymeric resists, direct patternability with various forms of radiation, mild post-exposure treatment requirements, positive or negative tone development, and a selectivity greater than 100:1 with respect to the underlying silicon in a fluorine-based continuous plasma-etching process. The use of such materials for high-resolution deep silicon etching is time- and cost-effective compared with the pattern-transfer materials that are generally used. (literal)

Prodotto di

• MD.P06.017.001 Nanofabbricazione (MD.P06.017.005) (Modulo)

Autore CNR

• ALESSANDRO POZZATO (Persona)
• GIANLUCA GRENCI (Unità di personale interno)
• MASSIMO TORMEN (Unità di personale interno)

Incoming links:

Autore CNR di

• MASSIMO TORMEN (Unità di personale interno)
• GIANLUCA GRENCI (Unità di personale interno)
• ALESSANDRO POZZATO (Persona)

Prodotto

• MD.P06.017.001 Nanofabbricazione (MD.P06.017.005) (Modulo)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#rivistaDi

• Advanced materials (Rivista)