http://www.cnr.it/ontology/cnr/individuo/prodotto/ID319604
Advanced Characterization Of Carrier Profiles In Germanium Using Micro-Machined Contact Probes (Contributo in atti di convegno)
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- Advanced Characterization Of Carrier Profiles In Germanium Using Micro-Machined Contact Probes (Contributo in atti di convegno) (literal)
- Anno
- 2012-01-01T00:00:00+01:00 (literal)
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi
- 10.1063/1.4766516 (literal)
- Alternative label
Clarysse, T.; Konttinen, M.; Parmentier, B.; Moussa, A.; Vandervorst, W.; Impellizzeri, G.; Napolitani, E.; Privitera, V.; Nielsen, P. F.; Petersen, D. H.; Hansen, O. (2012)
Advanced Characterization Of Carrier Profiles In Germanium Using Micro-Machined Contact Probes
in Ion Implantation Technology 2012
(literal)
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
- Clarysse, T.; Konttinen, M.; Parmentier, B.; Moussa, A.; Vandervorst, W.; Impellizzeri, G.; Napolitani, E.; Privitera, V.; Nielsen, P. F.; Petersen, D. H.; Hansen, O. (literal)
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- ISI Web of Science (WOS) (literal)
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
- 1) imec, Kapeldreef 75, B-3001 Leuven, Belgium, 2) Department of Physics, University of Jyväskylä, P.O. Box 35,
40014 Jyväskylä, Finland, 3) Instituut voor Kern- en Stralingsfysika, K.U. Leuven, Celestijnenlaan 200D, B-3001 Leuven, Belgium, 4) MATIS IMM-CNR and Dipartimento di Fisica e Astronomia, Univ. Di Catania, 95123 Catania, Italy, 5) MATIS IMM-CNR and Dipartimento di Fisica e Astronomia, Univ. Di Padova, 35131 Padova, Italy, 6) Capres A/S, Scion-DTU, Building 373, DK-2800 Kongens Lyngby, Denmark, 7) DTU Nanotech, Dept. of Micro and Nanotechnology, Technical University of Denmark, Building 345 East, DK-2800 Kongens Lyngby, Denmark, 8) CINF, Center for Individual Nanoparticle Functionality, Technical University of Denmark,DK-2800 Kongens Lyngby, Denmark, (literal)
- Titolo
- Advanced Characterization Of Carrier Profiles In Germanium Using Micro-Machined Contact Probes (literal)
- Abstract
- The accurate determination of the sheet resistance and carrier depth profile, i.e. active dopant profile, of shallow junction isolated structures involving new high mobility materials, such as germanium, is a crucial topic for future CMOS development. In this work, we discuss the capabilities of new concepts based on micro machined, closely spaced contact probes (10 mu m pitch). When using four probes to perform sheet resistance measurements, a quantitative carrier profile extraction based on the evolution of the sheet resistance versus depth along a beveled surface is obtained. Considering the use of only two probes, a spreading resistance like setup is obtained with small spacing and drastically reduced electrical contact radii (similar to 10 nm) leading to a substantial reduction of the correction factors which are normally required for converting spreading resistance profiles. We demonstrate the properties of both approaches on Al+ implants in germanium with different anneal treatments. (literal)
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