Room-temperature nanowire terahertz photodetectors (Articolo in rivista)

Type

• Prodotto della ricerca (Classe)
• Articolo in rivista (Classe)

Label

• Room-temperature nanowire terahertz photodetectors (Articolo in rivista) (literal)

Anno

• 2013-01-01T00:00:00+01:00 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi

• 10.1117/12.2004193 (literal)

Alternative label

• Romeo, Lorenzo; Coquillant, Dominique; Viti, Leonardo; Ercolani, Daniele; Sorba, Lucia; Knap, Wojciech; Tredicucci, Alessandro; Vitiello, Miriam Serena (2013)
  Room-temperature nanowire terahertz photodetectors
  in Proceedings of SPIE, the International Society for Optical Engineering
  (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori

• Romeo, Lorenzo; Coquillant, Dominique; Viti, Leonardo; Ercolani, Daniele; Sorba, Lucia; Knap, Wojciech; Tredicucci, Alessandro; Vitiello, Miriam Serena (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume

• 8631 (literal)

Rivista

• Proceedings of SPIE, the International Society for Optical Engineering (Rivista)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#pagineTotali

• 9 (literal)

Note

• ISI Web of Science (WOS) (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni

• Consiglio Nazionale delle Ricerche (CNR) (literal)

Titolo

• Room-temperature nanowire terahertz photodetectors (literal)

Abstract

• Semiconductor nanowires (NWs) represent an ideal building block for implementing rectifying diodes or plasma-wave detectors that could operate well into the THz, thanks to the typical attofarad-order capacitance. Despite the strong effort in developing these nanostructures for a new generation of complementary metal-oxide semiconductors (CMOS), memory and photonic devices, their potential as radiation sensors into the Terahertz is just starting to be explored. We report on the development of NW-based field effect transistors operating as high sensitivity THz detectors in the 0 : 3 2 : 8 THz range. By feeding the radiation field of either an electronic THz source or a quantum cascade laser (QCL) at the gate-source electrodes by means of a wide band dipole antenna, we measured a photovoltage signal corresponding to responsivity values up to 100V/W, with impressive noise equivalent power levels < 6 x 10(-11) W/root Hz at room temperature and a >300 kHz modulation bandwidth. The potential scalability to even higher frequencies and the technological feasibility of realizing multi-pixel arrays coupled with QCL sources make the proposed technology highly competitive for a future generation of THz detection systems. (literal)

Prodotto di

• Nanofotonica (MD.P06.020.002) (Modulo)

Autore CNR

• MIRIAM SERENA VITIELLO (Unità di personale interno)
• DANIELE ERCOLANI (Unità di personale esterno)
• LUCIA SORBA (Unità di personale interno)
• LEONARDO VITI (Unità di personale esterno)

Insieme di parole chiave

• Keywords of "Room-temperature nanowire terahertz photodetectors" (Insieme di parole chiave)

Incoming links:

Autore CNR di

• MIRIAM SERENA VITIELLO (Unità di personale interno)
• LUCIA SORBA (Unità di personale interno)
• LEONARDO VITI (Unità di personale esterno)
• http://www.cnr.it/ontology/cnr/individuo/unitaDiPersonaleEsterno/ID24594
• DANIELE ERCOLANI (Unità di personale esterno)

Prodotto

• Nanofotonica (MD.P06.020.002) (Modulo)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#rivistaDi

• Proceedings of SPIE, the International Society for Optical Engineering (Rivista)

Insieme di parole chiave di

• Keywords of "Room-temperature nanowire terahertz photodetectors" (Insieme di parole chiave)