Understanding Polarization Properties of InAs Quantum Dots by Atomistic Modeling of Growth Dynamics (Articolo in rivista)

Type
Label
  • Understanding Polarization Properties of InAs Quantum Dots by Atomistic Modeling of Growth Dynamics (Articolo in rivista) (literal)
Anno
  • 2013-01-01T00:00:00+01:00 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi
  • 10.1063/1.4848262 (literal)
Alternative label
  • Tasco, Vittorianna; Usman, Muhammad; Todaro, Maria Teresa; De Giorgi, Milena; Passaseo, Adriana (2013)
    Understanding Polarization Properties of InAs Quantum Dots by Atomistic Modeling of Growth Dynamics
    in AIP conference proceedings
    (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
  • Tasco, Vittorianna; Usman, Muhammad; Todaro, Maria Teresa; De Giorgi, Milena; Passaseo, Adriana (literal)
Pagina inizio
  • 15 (literal)
Pagina fine
  • 16 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume
  • 1566 (literal)
Rivista
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#pagineTotali
  • 2 (literal)
Note
  • ISI Web of Science (WOS) (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
  • Consiglio Nazionale delle Ricerche (CNR) (literal)
Titolo
  • Understanding Polarization Properties of InAs Quantum Dots by Atomistic Modeling of Growth Dynamics (literal)
Abstract
  • A model for realistic InAs quantum dot composition profile is proposed and analyzed, consisting of a double region scheme with an In-rich internal core and an In-poor external shell, in order to mimic the atomic scale phenomena such as In-Ga intermixing and In segregation during the growth and overgrowth with GaAs. The parameters of the proposed model are derived by reproducing the experimentally measured polarization data. Further understanding is developed by analyzing the strain fields which suggests that the two-composition model indeed results in lower strain energies than the commonly applied uniform composition model. (literal)
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