Depth profiling of ultra-thin alumina layers grown on Co(0001) (Articolo in rivista)

Type
Label
  • Depth profiling of ultra-thin alumina layers grown on Co(0001) (Articolo in rivista) (literal)
Anno
  • 2013-01-01T00:00:00+01:00 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi
  • 10.1088/0953-8984/25/9/095004 (literal)
Alternative label
  • Nemsak, S.; Skala, T.; Yoshitake, M.; Prince, K. C.; Matolin, V. (2013)
    Depth profiling of ultra-thin alumina layers grown on Co(0001)
    in Journal of physics. Condensed matter (Print)
    (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
  • Nemsak, S.; Skala, T.; Yoshitake, M.; Prince, K. C.; Matolin, V. (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume
  • 25 (literal)
Rivista
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  • 8 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroFascicolo
  • 9 (literal)
Note
  • ISI Web of Science (WOS) (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
  • National Institute of Materials Science (NIMS) - Japan; Charles University Prague; Elettra Sincrotrone Trieste SCpA; CNR IOM (literal)
Titolo
  • Depth profiling of ultra-thin alumina layers grown on Co(0001) (literal)
Abstract
  • Epitaxial thin oxide layers were grown by simultaneous aluminum deposition and oxidation on a Co(0001) single crystal, and the metal-oxide interface between the substrate and the grown layer was studied using photoelectron spectroscopy. The oxide layers were composed of two kinds of chemically different layers. Angle-resolved measurements were used to determine the compositions of oxide sub-layers and to reveal their respective thicknesses. The topmost oxide layers were up to 0.23 nm thick, determined by analysis of O 1s and Co 2p(3/2) photoelectron spectra. The results of the analysis show that the interface layer is composed of a mixture of oxygen and cobalt atoms and its thickness is approximately 0.6 nm. The analysis of Co 2p(3/2), Al 2p(3/2) and O 1s core level binding energies confirmed the presence of CoO in the interface layer and Al2O3 in the topmost oxide layer. (literal)
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