Optical Conductivity Measurements of GaTa4Se8 Under High Pressure: Evidence of a Bandwidth-Controlled Insulator-to-Metal Mott Transition (Articolo in rivista)

Type

• Prodotto della ricerca (Classe)
• Articolo in rivista (Classe)

Label

• Optical Conductivity Measurements of GaTa4Se8 Under High Pressure: Evidence of a Bandwidth-Controlled Insulator-to-Metal Mott Transition (Articolo in rivista) (literal)

Anno

• 2013-01-01T00:00:00+01:00 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi

• 10.1103/PhysRevLett.110.037401 (literal)

Alternative label

• Phuoc, V. Ta; Vaju, C.; Corraze, B.; Sopracase, R.; Perucchi, A.; Marini, C.; Postorino, P.; Chligui, M.; Lupi, S.; Janod, E.; Cario, L. (2013)
  Optical Conductivity Measurements of GaTa4Se8 Under High Pressure: Evidence of a Bandwidth-Controlled Insulator-to-Metal Mott Transition
  in Physical review letters (Print)
  (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori

• Phuoc, V. Ta; Vaju, C.; Corraze, B.; Sopracase, R.; Perucchi, A.; Marini, C.; Postorino, P.; Chligui, M.; Lupi, S.; Janod, E.; Cario, L. (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume

• 110 (literal)

Rivista

• Physical review letters (Rivista)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#pagineTotali

• 5 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroFascicolo

• 3 (literal)

Note

• ISI Web of Science (WOS) (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni

• CEA; Centre National de la Recherche Scientifique (CNRS); Consiglio Nazionale delle Ricerche (CNR); Sapienza University Rome; Sincrotrone Trieste SCpA (literal)

Titolo

• Optical Conductivity Measurements of GaTa4Se8 Under High Pressure: Evidence of a Bandwidth-Controlled Insulator-to-Metal Mott Transition (literal)

Abstract

• The optical properties of a GaTa4Se8 single crystal are investigated under high pressure. At ambient pressure, the optical conductivity exhibits a charge gap of approximate to 0.12 eV and a broad midinfrared band at approximate to 0.55 eV. As pressure is increased, the low energy spectral weight is strongly enhanced and the optical gap is rapidly filled, pointing to an insulator to metal transition around 6 GPa. The overall evolution of the optical conductivity demonstrates that GaTa4Se8 is a Mott insulator which undergoes a bandwidth-controlled Mott metal-insulator transition under pressure, in remarkably good agreement with theory. With the use of our optical data and ab initio band structure calculations, our results were successfully compared to the (U/D, T/D) phase diagram predicted by dynamical mean field theory for strongly correlated systems. (literal)

Prodotto di

• MD.P04.006.001 Transizioni di fase e proprietà magnetiche in ossidi fortemente correlati, interfacce metallo-semiconduttore, metalli anomali e superconduttori (MD.P04.006.004) (Modulo)

Autore CNR

• STEFANO LUPI (Persona)
• PAOLO POSTORINO (Unità di personale esterno)

Incoming links:

Autore CNR di

• STEFANO LUPI (Persona)
• PAOLO POSTORINO (Unità di personale esterno)

Prodotto

• MD.P04.006.001 Transizioni di fase e proprietà magnetiche in ossidi fortemente correlati, interfacce metallo-semiconduttore, metalli anomali e superconduttori (MD.P04.006.004) (Modulo)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#rivistaDi

• Physical review letters (Rivista)