Optical gain in PECVD grown silicon nanocrystals (Contributo in atti di convegno)

Type

• Contributo in atti di convegno (Classe)
• Prodotto della ricerca (Classe)

Label

• Optical gain in PECVD grown silicon nanocrystals (Contributo in atti di convegno) (literal)

Anno

• 2002-01-01T00:00:00+01:00 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi

• 10.1117/12.451992 (literal)

Alternative label

• Dal Negro, L; Cazzanelli, M; Gaburro, Z; Pavesi, L; Pacifici, D; Priolo, F; Franzo, G; Iacona, F (2002)
  Optical gain in PECVD grown silicon nanocrystals
  in Conference on Optical Properties of Nanocrystals, SEATTLE, WA, JUL 09-11, 2002
  (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori

• Dal Negro, L; Cazzanelli, M; Gaburro, Z; Pavesi, L; Pacifici, D; Priolo, F; Franzo, G; Iacona, F (literal)

Pagina inizio

• 13 (literal)

Pagina fine

• 27 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume

• 4808 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#volumeInCollana

• 4808 (literal)

Rivista

• Proceedings of SPIE, the International Society for Optical Engineering (Rivista)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#pagineTotali

• 15 (literal)

Note

• ISI Web of Science (WOS) (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni

• INFM and Dipartimento di Fisica, Universit?a di Trento, I-38050 Povo (Trento), Italy INFM and Dipartimento di Fisica, Universit?a di Catania, I-95129 Catania, Italy CNR-IMM, Sezione di Catania, I-95121 Catania, Italy (literal)

Titolo

• Optical gain in PECVD grown silicon nanocrystals (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#isbn

• 0-8194-4576-2 (literal)

Abstract

• Optical gain has been recently observed in ion implanted Si nanocrystals (nc).(1) Critical issues to the observation of optical gain are the formation of a waveguide structure to improve the mode confinement and a large nanocrystal area density in the samples. Here we confirm these results by measuring optical gain by the variable stripe length (VSL) method on a set of silicon nanocrystals (nc) formed by plasma enhanced chemical vapor deposition (PECVD) and annealing treatments. Time resolved VSL measurements with ns pulses at high pumping fluencies have revealed fast component in the recombination dynamics under gain conditions. Lifetime shortening and superlinear emission have been unambiguously observed. The spectral shape of the fast luminescence is consistent with the amplified spontaneous emission lineshape (ASE) observed under CW pumping conditions and overlaps the gain spectral band. The observation of light amplification is critically dependent on a very delicate balance among the nc gain cross sections, the optical mode losses of the waveguide structure, and the fast non radiative Auger processes. Within a four levels model we quantify the strong competition among all these processes and we obtain a satisfactory agreement with the experiments. (literal)

Prodotto di

• Institute for microelectronics and microsystems (IMM) (Istituto)

Autore CNR

• FABIO SANTO IACONA (Persona)
• GIORGIA FRANZO' (Unità di personale interno)
• FRANCESCO PRIOLO (Persona)

Insieme di parole chiave

• Keywords of "Optical gain in PECVD grown silicon nanocrystals" (Insieme di parole chiave)

Incoming links:

Autore CNR di

• GIORGIA FRANZO' (Unità di personale interno)
• FRANCESCO PRIOLO (Persona)
• FABIO SANTO IACONA (Persona)

Prodotto

• Institute for microelectronics and microsystems (IMM) (Istituto)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#rivistaDi

• Proceedings of SPIE, the International Society for Optical Engineering (Rivista)

Insieme di parole chiave di

• Keywords of "Optical gain in PECVD grown silicon nanocrystals" (Insieme di parole chiave)