http://www.cnr.it/ontology/cnr/individuo/prodotto/ID315543
Al+ Implanted 4H-SiC p+-i-n Diodes: Evidence for Post-Implantation- Annealing Dependent Defect Activation (Abstract/Poster in convegno)
- Type
- Label
- Al+ Implanted 4H-SiC p+-i-n Diodes: Evidence for Post-Implantation- Annealing Dependent Defect Activation (Abstract/Poster in convegno) (literal)
- Anno
- 2013-01-01T00:00:00+01:00 (literal)
- Alternative label
U. Grossner; M. Moscatelli; G. Pizzochero; R. Nipoti (2013)
Al+ Implanted 4H-SiC p+-i-n Diodes: Evidence for Post-Implantation- Annealing Dependent Defect Activation
in 15th International Conference on Silicon Carbide and Related Materials, Miyazaki, Japan, September 29 - October 4, 2013
(literal)
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
- U. Grossner; M. Moscatelli; G. Pizzochero; R. Nipoti (literal)
- Note
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
- ABB Corporate Research, Switzerland; CNR-IMM of Bologna, Italy; CNR-IMM of Bologna, Italy; CNR-IMM of Bologna, Italy (literal)
- Titolo
- Al+ Implanted 4H-SiC p+-i-n Diodes: Evidence for Post-Implantation- Annealing Dependent Defect Activation (literal)
- Prodotto di
- Autore CNR
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