Al+ Implanted 4H-SiC p+-i-n Diodes: Evidence for Post-Implantation- Annealing Dependent Defect Activation (Abstract/Poster in convegno)

Type
Label
  • Al+ Implanted 4H-SiC p+-i-n Diodes: Evidence for Post-Implantation- Annealing Dependent Defect Activation (Abstract/Poster in convegno) (literal)
Anno
  • 2013-01-01T00:00:00+01:00 (literal)
Alternative label
  • U. Grossner; M. Moscatelli; G. Pizzochero; R. Nipoti (2013)
    Al+ Implanted 4H-SiC p+-i-n Diodes: Evidence for Post-Implantation- Annealing Dependent Defect Activation
    in 15th International Conference on Silicon Carbide and Related Materials, Miyazaki, Japan, September 29 - October 4, 2013
    (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
  • U. Grossner; M. Moscatelli; G. Pizzochero; R. Nipoti (literal)
Note
  • Poster (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
  • ABB Corporate Research, Switzerland; CNR-IMM of Bologna, Italy; CNR-IMM of Bologna, Italy; CNR-IMM of Bologna, Italy (literal)
Titolo
  • Al+ Implanted 4H-SiC p+-i-n Diodes: Evidence for Post-Implantation- Annealing Dependent Defect Activation (literal)
Prodotto di
Autore CNR

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