CONTACT RESISTIVITY AND MECHANICAL CHARACTERIZATION OF METAL ELECTRODES ONTO MAGNESIUM SILICIDE AND HMS MATERIALS (Comunicazione a convegno)

Type
Label
  • CONTACT RESISTIVITY AND MECHANICAL CHARACTERIZATION OF METAL ELECTRODES ONTO MAGNESIUM SILICIDE AND HMS MATERIALS (Comunicazione a convegno) (literal)
Anno
  • 2015-01-01T00:00:00+01:00 (literal)
Alternative label
  • Ferrario1, S. Battiston1, S. Boldrini1, T. Sakamoto2,3, E. Miorin1, A. Famengo1, A. Miozzo1, S. Fiameni1, T. Iida2, M. Fabrizio1 (2015)
    CONTACT RESISTIVITY AND MECHANICAL CHARACTERIZATION OF METAL ELECTRODES ONTO MAGNESIUM SILICIDE AND HMS MATERIALS
    in Giornate sulla Termoelettricità 2015, Milano, 18-19 Febbraio 2015
    (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
  • Ferrario1, S. Battiston1, S. Boldrini1, T. Sakamoto2,3, E. Miorin1, A. Famengo1, A. Miozzo1, S. Fiameni1, T. Iida2, M. Fabrizio1 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
  • 1CNR-IENI, Corso Stati Uniti 4, 35127 Padova, Italy 2Department of Materials Science and Technology, Tokyo University of Science, 6-3-1, Niijuku, Katsushika-ku, Tokyo 125-8585, Japan 3Japan Society for the Promotion of Science (JSPS) postdoctoral research fellow (literal)
Titolo
  • CONTACT RESISTIVITY AND MECHANICAL CHARACTERIZATION OF METAL ELECTRODES ONTO MAGNESIUM SILICIDE AND HMS MATERIALS (literal)
Abstract
  • In this work, the characterization of metal-semiconductor contacts on n-type polycrystalline Mg2Si and HMS substrate for the application of thermoelectric devices is presented. Different metal (e.g. Au, Cu, Ni) and interlayer (Al, Ti) were deposited by DC magnetron sputtering while an Ag-based alloy was melted onto the sample. Tribological measurements were carried out on the electrodes in order to evaluate their adhesion properties to the substrates. Energy Dispersive Spectroscopy (EDS) coupled with Field Emission Scanning Electron FE-SEM microscopy were applied to characterize the composition and morphology of the pellets on a heating stage. The electrical properties of the metal-semiconductor interfaces was investigated in term of their current-voltage (I-V) characteristics and contact resistance. The contact resistance was obtained with a custom-built apparatus, in which a tungsten carbide µ-probe shifts along the electrode/semiconductor interface, measuring the resistance at each point. (literal)
Prodotto di
Autore CNR

Incoming links:


Prodotto
Autore CNR di
data.CNR.it