Admittance spectroscopy of GaAs/InGaP MQW structures (Articolo in rivista)

Type
Label
  • Admittance spectroscopy of GaAs/InGaP MQW structures (Articolo in rivista) (literal)
Anno
  • 2008-01-01T00:00:00+01:00 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi
  • 10.1016/j.mseb.2007.08.017 (literal)
Alternative label
  • E. Gombia a; C. Ghezzi b; A. Parisini b; L. Tarricone b; M. Longo c (2008)
    Admittance spectroscopy of GaAs/InGaP MQW structures
    in Materials science & engineering. B, Solid-state materials for advanced technology
    (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
  • E. Gombia a; C. Ghezzi b; A. Parisini b; L. Tarricone b; M. Longo c (literal)
Pagina inizio
  • 171 (literal)
Pagina fine
  • 174 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume
  • 147 (literal)
Rivista
Note
  • ISI Web of Science (WOS) (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
  • a CNR-IMEM Institute, Parco Area delle Scienze 37A, 43100 Parma, Italy b Dipartimento di Fisica, Universit`a di Parma, CNISM, Viale G.P. Usberti, 7/A, 43100 Parma, Italy c CNR-INFM, Dipartimento di Fisica Universit`a di Parma, Viale G.P. Usberti, 7/A, 43100 Parma, Italy (literal)
Titolo
  • Admittance spectroscopy of GaAs/InGaP MQW structures (literal)
Abstract
  • An accurate determination of the valence band discontinuity of the lattice matched GaAs/InGaP heterostructure is performed by admittance spectroscopy measurements in p(+)/MQW/n(+) structures grown by metal-organic vapour phase epitaxy (MOVPE) using tertiarybutylarsine and tertiarybutylphosphine as alternative precursors for the V group elements. Through the analysis of the temperature dependence of the resonance frequency (omega) over bar at which the isothermal curves of the conductance over frequency G(omega)/omega have the maximum, the energy separation of 336 +/- 5 meV between the lowest heavy hole quantum level in the GaAs wells and the InGaP valence band top is obtained. A valence band discontinuity of Delta E-V = 346 +/- 5 meV is then derived by accounting for the calculated confinement energy of heavy holes (E-1(hh) = 10 meV). Experimental values of Delta E-V previously reported in the literature spread over the wide range of 300-400 meV. (C) 2007 Elsevier B.V. All rights reserved. (literal)
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