N-type doping of Ge by As implantation and excimer laser annealing (Articolo in rivista)

Type
Label
  • N-type doping of Ge by As implantation and excimer laser annealing (Articolo in rivista) (literal)
Anno
  • 2014-01-01T00:00:00+01:00 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi
  • 10.1063/1.4863779 (literal)
Alternative label
  • Milazzo, R.; Napolitani, E.; Impellizzeri, G.; Fisicaro, G.; Boninelli, S.; Cuscuna, M.; De Salvador, D.; Mastromatteo, M.; Italia, M.; La Magna, A.; Fortunato, G.; Priolo, F.; Privitera, V.; Carnera, A. (2014)
    N-type doping of Ge by As implantation and excimer laser annealing
    in Journal of applied physics
    (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
  • Milazzo, R.; Napolitani, E.; Impellizzeri, G.; Fisicaro, G.; Boninelli, S.; Cuscuna, M.; De Salvador, D.; Mastromatteo, M.; Italia, M.; La Magna, A.; Fortunato, G.; Priolo, F.; Privitera, V.; Carnera, A. (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume
  • 115 (literal)
Rivista
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#pagineTotali
  • 5 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroFascicolo
  • 5 (literal)
Note
  • ISI Web of Science (WOS) (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
  • University of Padua; University of Padua; University of Catania; University of Catania; Consiglio Nazionale delle Ricerche (CNR); Consiglio Nazionale delle Ricerche (CNR) (literal)
Titolo
  • N-type doping of Ge by As implantation and excimer laser annealing (literal)
Abstract
  • The diffusion and activation of arsenic implanted into germanium at 40 keV with maximum concentrations below and above the solid solubility (8 x 10(19) cm(-3)) have been studied, both experimentally and theoretically, after excimer laser annealing (lambda = 308 nm) in the melting regime with different laser energy densities and single or multiple pulses. Arsenic is observed to diffuse similarly for different fluences with no out-diffusion and no formation of pile-up at the maximum melt depth. The diffusion profiles have been satisfactorily simulated by assuming two diffusivity states of As in the molten Ge and a non-equilibrium segregation at the maximum melt depth. The electrical activation is partial and decreases with increasing the chemical concentration with a saturation of the active concentration at 1 x 10(20) cm(-3), which represents a new record for the As-doped Ge system. (C) 2014 AIP Publishing LLC. (literal)
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