A non-destructive approach for doping profiles characterization by micro-Raman spectroscopy: the case of B-implanted Ge (Articolo in rivista)

Type
Label
  • A non-destructive approach for doping profiles characterization by micro-Raman spectroscopy: the case of B-implanted Ge (Articolo in rivista) (literal)
Anno
  • 2014-01-01T00:00:00+01:00 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi
  • 10.1002/jrs.4440 (literal)
Alternative label
  • Sanson, A.; Napolitani, E.; Carnera, A.; Impellizzeri, G.; Giarola, M.; Mariotto, G. (2014)
    A non-destructive approach for doping profiles characterization by micro-Raman spectroscopy: the case of B-implanted Ge
    in Journal of Raman spectroscopy
    (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
  • Sanson, A.; Napolitani, E.; Carnera, A.; Impellizzeri, G.; Giarola, M.; Mariotto, G. (literal)
Pagina inizio
  • 197 (literal)
Pagina fine
  • 201 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume
  • 45 (literal)
Rivista
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#pagineTotali
  • 5 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroFascicolo
  • 2 (literal)
Note
  • ISI Web of Science (WOS) (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
  • University of Padua; University of Padua; University of Catania; University of Catania; University of Verona (literal)
Titolo
  • A non-destructive approach for doping profiles characterization by micro-Raman spectroscopy: the case of B-implanted Ge (literal)
Abstract
  • B-implanted Ge samples have been investigated by micro-Raman spectroscopy under different excitation wavelengths, with the aim of gaining insights about the B distribution at different depths beneath the sample surface. The intensities, observed under the different excitation wavelengths, of the B-Ge Raman peak at about 545cm(-1), which is due to the local vibrational mode of the substitutional B atoms in the Ge matrix, have been used to calibrate the optical absorption lengths in B-implanted Ge. Then, by using these calibrated values, a very sharp correlation between the spectral features of the Ge-Ge Raman peak at similar to 300cm(-1) and the content of substitutional B atoms has been derived. Accordingly, a non-destructive approach, based on micro-Raman spectroscopy under different excitation wavelengths, is presented to estimate, at least at the lowest depths, the carrier concentration profiles from the spectral features of the Ge-Ge Raman peak. Copyright (c) 2014 John Wiley & Sons, Ltd. (literal)
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