http://www.cnr.it/ontology/cnr/individuo/prodotto/ID314476
Role of oxygen on the electrical activation of B in Ge by excimer laser annealing (Articolo in rivista)
- Type
- Label
- Role of oxygen on the electrical activation of B in Ge by excimer laser annealing (Articolo in rivista) (literal)
- Anno
- 2014-01-01T00:00:00+01:00 (literal)
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi
- 10.1002/pssa.201300308 (literal)
- Alternative label
Impellizzeri, G.; Napolitani, E.; Milazzo, R.; Boninelli, S.; Cuscuna, M.; Fisicaro, G.; La Magna, A.; Fortunato, G.; Priolo, F.; Privitera, V. (2014)
Role of oxygen on the electrical activation of B in Ge by excimer laser annealing
in Physica status solidi. A, Applications and materials science (Print)
(literal)
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
- Impellizzeri, G.; Napolitani, E.; Milazzo, R.; Boninelli, S.; Cuscuna, M.; Fisicaro, G.; La Magna, A.; Fortunato, G.; Priolo, F.; Privitera, V. (literal)
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- ISI Web of Science (WOS) (literal)
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- CNR IMM MATIS; Dipartimento Fis & Astron; CNR IMM MATIS; Dipartimento Fis & Astron; Consiglio Nazionale delle Ricerche (CNR); Consiglio Nazionale delle Ricerche (CNR) (literal)
- Titolo
- Role of oxygen on the electrical activation of B in Ge by excimer laser annealing (literal)
- Abstract
- The electrical activation of B+ implanted at 20keV with a fluence of 1x10(15)cm(-2) in crystalline Ge, following a laser annealing (=308nm) with multipulses (1, 3, or 10), was studied. Incomplete activation was observed for all the irradiated samples. The inactivation of B was correlated to the presence of oxygen, coming from the native germanium oxide. The formation of B-O complexes occurs during the solidification of the Ge, hampering the substitutionality and the electrical activation of the dopant. We estimated the diffusivity of oxygen in liquid Ge, approximate to 3x10(-5)cm(2)s(-1), by fitting the experimental O concentration profiles. These studies clarify the key role played by oxygen on the electrical activation of B in Ge by laser annealing, and have to be considered for the fabrication of junctions in advanced scaled Ge-based devices. (C) 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim (literal)
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