http://www.cnr.it/ontology/cnr/individuo/prodotto/ID314461
Role of F on the Electrical Activation of As in Ge (Articolo in rivista)
- Type
- Label
- Role of F on the Electrical Activation of As in Ge (Articolo in rivista) (literal)
- Anno
- 2012-01-01T00:00:00+01:00 (literal)
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi
- 10.1149/2.009203jss (literal)
- Alternative label
Impellizzeri, G.; Napolitani, E.; Boninelli, S.; Sullivan, J. P.; Roberts, J.; Buckman, S. J.; Ruffell, S.; Priolo, F.; Privitera, V. (2012)
Role of F on the Electrical Activation of As in Ge
in ECS Journal of Solid State Science and Technology
(literal)
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
- Impellizzeri, G.; Napolitani, E.; Boninelli, S.; Sullivan, J. P.; Roberts, J.; Buckman, S. J.; Ruffell, S.; Priolo, F.; Privitera, V. (literal)
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- Pagina fine
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- Note
- ISI Web of Science (WOS) (literal)
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
- University of Catania; University of Catania; University of Padua; University of Padua; Australian National University; Australian National University (literal)
- Titolo
- Role of F on the Electrical Activation of As in Ge (literal)
- Abstract
- Fluorine is known to strongly influence the dopant diffusion and electrical activation in Si. Similar effects might be exploited in Ge for optimizing its application in microelectronics. The role of F on the electrical activation of As in Ge after thermal treatments is elucidated. We have found that F, enriching the Ge matrix with vacancies strongly affects the electrical response of As-doped junctions. We also demonstrated that the F-interstitials clusters, formed next to the end-of-range region, have an acceptor-like behavior. These phenomena are characterized by chemical and electrical profiling analyses and by positron annihilation lifetime spectrometry. (C) 2012 The Electrochemical Society. All rights reserved. (literal)
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