Doping-dependent band structure of LaAlO3/SrTiO3 interfaces by soft x-ray polarizationcontrolled resonant angle-resolved photoemission (Articolo in rivista)

Type
Label
  • Doping-dependent band structure of LaAlO3/SrTiO3 interfaces by soft x-ray polarizationcontrolled resonant angle-resolved photoemission (Articolo in rivista) (literal)
Anno
  • 2014-01-01T00:00:00+01:00 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi
  • 10.1103/PhysRevB.89.121412 (literal)
Alternative label
  • C. Cancellieri, M. L. Reinle-Schmitt, M. Kobayashi, V. N. Strocov, P. R. Willmott, D. Fontaine, Ph. Ghosez, A. Filippetti, P. Delugas, and V. Fiorentini (2014)
    Doping-dependent band structure of LaAlO3/SrTiO3 interfaces by soft x-ray polarizationcontrolled resonant angle-resolved photoemission
    in Physical review. B, Condensed matter and materials physics
    (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
  • C. Cancellieri, M. L. Reinle-Schmitt, M. Kobayashi, V. N. Strocov, P. R. Willmott, D. Fontaine, Ph. Ghosez, A. Filippetti, P. Delugas, and V. Fiorentini (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume
  • 89 (literal)
Rivista
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroFascicolo
  • 12 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
  • Paul Scherrer Inst, Swiss Light Source, CH-5232 Villigen, Switzerland; Univ Liege, B-4000 Sart Tilman Par Liege, Belgium; Univ Cagliari, CNR IOM UOS Cagliari, Dipartimento Fis, I-09042 Monserrato, CA, Italy (literal)
Titolo
  • Doping-dependent band structure of LaAlO3/SrTiO3 interfaces by soft x-ray polarizationcontrolled resonant angle-resolved photoemission (literal)
Abstract
  • Polarization-controlled synchrotron radiation was used to map the electronic structure of buried conducting interfaces of LaAlO3/SrTiO3 in a resonant angle-resolved photoemission experiment. A strong polarization dependence of the Fermi surface and band dispersions is demonstrated, highlighting different Ti 3d orbitals involved in two-dimensional (2D) conduction. Measurements on samples with different doping levels reveal different band occupancies and Fermi-surface areas. The photoemission results are directly compared with advanced first-principles calculations, carried out for different 3d-band filling levels connected with the 2D mobile carrier concentrations obtained from transport measurements, with indication of charge localization at the interface. (literal)
Prodotto di
Autore CNR

Incoming links:


Autore CNR di
Prodotto
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#rivistaDi
data.CNR.it