Direct observation of both contact and remote oxygen scavenging of GeO2 in a metal-oxide-semiconductor stack (Articolo in rivista)

Type

• Articolo in rivista (Classe)
• Prodotto della ricerca (Classe)

Label

• Direct observation of both contact and remote oxygen scavenging of GeO2 in a metal-oxide-semiconductor stack (Articolo in rivista) (literal)

Anno

• 2014-01-01T00:00:00+01:00 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi

• 10.1063/1.4898645 (literal)

Alternative label

• Fadida, S.; Shekhter, P.; Cvetko, D.; Floreano, L.; Verdini, A.; Nyns, L.; Van Elshocht, S.; Kymissis, I.; Eizenberg, M. (2014)
  Direct observation of both contact and remote oxygen scavenging of GeO2 in a metal-oxide-semiconductor stack
  in Journal of applied physics
  (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori

• Fadida, S.; Shekhter, P.; Cvetko, D.; Floreano, L.; Verdini, A.; Nyns, L.; Van Elshocht, S.; Kymissis, I.; Eizenberg, M. (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume

• 116 (literal)

Rivista

• Journal of applied physics (Rivista)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#pagineTotali

• 6 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroFascicolo

• 16 (literal)

Note

• ISI Web of Science (WOS) (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni

• [Fadida, S.; Shekhter, P.; Eizenberg, M.] Technion Israel Inst Technol, Dept Mat Sci & Engn, Haifa, Israel; [Cvetko, D.; Floreano, L.; Verdini, A.] Area Ric, Lab TASC IOM CNR, Trieste, Italy; [Cvetko, D.] Univ Ljubljana, Dept Phys, Fac Math & Phys, Ljubljana, Slovenia; [Nyns, L.; Van Elshocht, S.] IMEC, B-3001 Leuven, Belgium; [Kymissis, I.] Columbia Univ, Dept Elect Engn, New York, NY 10027 USA (literal)

Titolo

• Direct observation of both contact and remote oxygen scavenging of GeO2 in a metal-oxide-semiconductor stack (literal)

Abstract

• In the path to incorporating Ge based metal-oxide-semiconductor into modern nano-electronics, one of the main issues is the oxide-semiconductor interface quality. Here, the reactivity of Ti on Ge stacks and the scavenging effect of Ti were studied using synchrotron X-ray photoelectron spectroscopy measurements, with an in-situ metal deposition and high resolution transmission electron microscopy imaging. Oxygen removal from the Ge surface was observed both in direct contact as well as remotely through an Al2O3 layer. The scavenging effect was studied in situ at room temperature and after annealing. We find that the reactivity of Ti can be utilized for improved scaling of Ge based devices. (C) 2014 AIP Publishing LLC. (literal)

Prodotto di

• MD.P06.016.001 Proprieta' elettroniche e strutturali di sistemi a bassa dimensionalita' (MD.P06.016.003) (Modulo)

Autore CNR

• LUCA FLOREANO (Persona)
• ALBERTO VERDINI (Unità di personale interno)

Incoming links:

Autore CNR di

• LUCA FLOREANO (Persona)
• ALBERTO VERDINI (Unità di personale interno)
• http://www.cnr.it/ontology/cnr/individuo/unitaDiPersonaleEsterno/ID23437

Prodotto

• MD.P06.016.001 Proprieta' elettroniche e strutturali di sistemi a bassa dimensionalita' (MD.P06.016.003) (Modulo)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#rivistaDi

• Journal of applied physics (Rivista)