Electrical properties of silicon carbide/silicon rich carbide multilayers for photovoltaic applications (Articolo in rivista)

Type

• Articolo in rivista (Classe)
• Prodotto della ricerca (Classe)

Label

• Electrical properties of silicon carbide/silicon rich carbide multilayers for photovoltaic applications (Articolo in rivista) (literal)

Anno

• 2015-01-01T00:00:00+01:00 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi

• 10.1016/j.solmat.2014.09.022 (literal)

Alternative label

• Perani M.; Cavalcoli D.; Canino M.; Allegrezza M.; Bellettato M.; Summonte C. (2015)
  Electrical properties of silicon carbide/silicon rich carbide multilayers for photovoltaic applications
  in Solar energy materials and solar cells
  (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori

• Perani M.; Cavalcoli D.; Canino M.; Allegrezza M.; Bellettato M.; Summonte C. (literal)

Pagina inizio

• 29 (literal)

Pagina fine

• 34 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#url

• http://www.scopus.com/inward/record.url?eid=2-s2.0-84910028531&partnerID=q2rCbXpz (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume

• 135 (literal)

Rivista

• Solar energy materials and solar cells (Rivista)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#pagineTotali

• 6 (literal)

Note

• Scopu (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni

• Department of Physics and Astronomy, University of Bologna, viale B. Pichat 6/2, 40127 Bologna, Italy; CNR-IMM, via Gobetti, 101, 40129 Bologna, Italy (literal)

Titolo

• Electrical properties of silicon carbide/silicon rich carbide multilayers for photovoltaic applications (literal)

Abstract

• Silicon carbide/silicon rich carbide multilayers, aimed at the formation of silicon nanodots for photovoltaic applications, have been studied. The electrical properties have been investigated at the nano-scale by conductive Atomic Force Microscopy (c-AFM) and at macro-scale by temperature dependent conductivity measurements. The mixture is composed of highly conductive Si nanoclusters and moderately conductive SiC nanoclusters in a disordered matrix. The conduction mechanism takes place via band states induced by the disorder at the interface between nanodot clusters. Structural properties have been extracted by optical spectroscopy analyses. The results contribute to the understanding of the microscopical electronic mechanisms of the composite material, which is a candidate for third generation photovoltaics. (literal)

Prodotto di

• Institute for microelectronics and microsystems (IMM) (Istituto)

Autore CNR

• MARIACONCETTA CANINO (Unità di personale interno)
• MICHELE BELLETTATO (Unità di personale interno)
• MARCO ALLEGREZZA (Persona)
• CATERINA SUMMONTE (Persona)

Insieme di parole chiave

• Keywords of "Electrical properties of silicon carbide/silicon rich carbide multilayers for photovoltaic applications" (Insieme di parole chiave)

Incoming links:

Prodotto

• Institute for microelectronics and microsystems (IMM) (Istituto)

Autore CNR di

• CATERINA SUMMONTE (Persona)
• MARCO ALLEGREZZA (Persona)
• MICHELE BELLETTATO (Unità di personale interno)
• MARIACONCETTA CANINO (Unità di personale interno)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#rivistaDi

• Solar energy materials and solar cells (Rivista)

Insieme di parole chiave di

• Keywords of "Electrical properties of silicon carbide/silicon rich carbide multilayers for photovoltaic applications" (Insieme di parole chiave)