http://www.cnr.it/ontology/cnr/individuo/prodotto/ID311237
Schottky Barrier Height Tuning by Hybrid Organic-Inorganic Multilayers (Contributo in atti di convegno)
- Type
- Label
- Schottky Barrier Height Tuning by Hybrid Organic-Inorganic Multilayers (Contributo in atti di convegno) (literal)
- Anno
- 2014-01-01T00:00:00+01:00 (literal)
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi
- 10.1557/opl.2014.396 (literal)
- Alternative label
Torrisi V, Squillaci M A, Ruffino F, Crupi I, Grimaldi M G, Marletta G (2014)
Schottky Barrier Height Tuning by Hybrid Organic-Inorganic Multilayers
in MRS Fall Meeting 2013, Boston USA, December 1-6, 2013
(literal)
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
- Torrisi V, Squillaci M A, Ruffino F, Crupi I, Grimaldi M G, Marletta G (literal)
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#volumeInCollana
- Rivista
- Note
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
- Laboratory for Molecular Surface and Nanotechnology (LAMSUN), Department of Chemical Sciences, University of Catania and CSGI, Viale A. Doria 6, 95125, Catania, Italy.
Dipartimento di Fisica ed Astronomia-Università di Catania, and MATIS IMM-CNR, via S. Sofia 64 95128 Catania, Italy. (literal)
- Titolo
- Schottky Barrier Height Tuning by Hybrid Organic-Inorganic Multilayers (literal)
- Abstract
- Semiconducting and insulating polymers and copolymers/Au nanograins based hybrid multilayers (HyMLs) were fabricated on p-Si single-crystal substrate by an iterative method that involves, respectively, Langmuir-Blodgett and spin-coating techniques (for the deposition of organic film) and sputtering technique (for the deposition of metal nanograins) to prepare Au/HyMLs/p-Si Schottky device. The electrical properties of the Au/HyMLs/p-Si Schottky device were investigated by current-voltage (I-V) measurements in the thickness range of 1-5 bilayers (BL). At different number of layers, current-voltage (I-V) measurements were performed. Results showed a rectifying behavior. Junction parameters, such as barrier height (BH), from the I-V measurements for example for the PMMA-b-PS based Au/HyMLs/p-Si structure were obtained as 0.72±0.02 eV at 1BL and 0.64±0.02eV at 5BL. It was observed that the BH value of 0.61 eV obtained for the 5 BL PS based Au/HyMLs/p-Si structure was lower than the value of 0.68 eV of conventional Au/p-Si Schottky diodes. Thus, modification of the interfacial potential barrier for Au/p-Si diodes has been achieved using a thin MLs of different polymers based HyMls semiconductor. (literal)
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