Schottky Barrier Height Tuning by Hybrid Organic-Inorganic Multilayers (Contributo in atti di convegno)

Type

• Contributo in atti di convegno (Classe)
• Prodotto della ricerca (Classe)

Label

• Schottky Barrier Height Tuning by Hybrid Organic-Inorganic Multilayers (Contributo in atti di convegno) (literal)

Anno

• 2014-01-01T00:00:00+01:00 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi

• 10.1557/opl.2014.396 (literal)

Alternative label

• Torrisi V, Squillaci M A, Ruffino F, Crupi I, Grimaldi M G, Marletta G (2014)
  Schottky Barrier Height Tuning by Hybrid Organic-Inorganic Multilayers
  in MRS Fall Meeting 2013, Boston USA, December 1-6, 2013
  (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori

• Torrisi V, Squillaci M A, Ruffino F, Crupi I, Grimaldi M G, Marletta G (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#volumeInCollana

• 1660 (literal)

Rivista

• MRS proceedings (Rivista)

Note

• Google S (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni

• Laboratory for Molecular Surface and Nanotechnology (LAMSUN), Department of Chemical Sciences, University of Catania and CSGI, Viale A. Doria 6, 95125, Catania, Italy. Dipartimento di Fisica ed Astronomia-Università di Catania, and MATIS IMM-CNR, via S. Sofia 64 95128 Catania, Italy. (literal)

Titolo

• Schottky Barrier Height Tuning by Hybrid Organic-Inorganic Multilayers (literal)

Abstract

• Semiconducting and insulating polymers and copolymers/Au nanograins based hybrid multilayers (HyMLs) were fabricated on p-Si single-crystal substrate by an iterative method that involves, respectively, Langmuir-Blodgett and spin-coating techniques (for the deposition of organic film) and sputtering technique (for the deposition of metal nanograins) to prepare Au/HyMLs/p-Si Schottky device. The electrical properties of the Au/HyMLs/p-Si Schottky device were investigated by current-voltage (I-V) measurements in the thickness range of 1-5 bilayers (BL). At different number of layers, current-voltage (I-V) measurements were performed. Results showed a rectifying behavior. Junction parameters, such as barrier height (BH), from the I-V measurements for example for the PMMA-b-PS based Au/HyMLs/p-Si structure were obtained as 0.72±0.02 eV at 1BL and 0.64±0.02eV at 5BL. It was observed that the BH value of 0.61 eV obtained for the 5 BL PS based Au/HyMLs/p-Si structure was lower than the value of 0.68 eV of conventional Au/p-Si Schottky diodes. Thus, modification of the interfacial potential barrier for Au/p-Si diodes has been achieved using a thin MLs of different polymers based HyMls semiconductor. (literal)

Prodotto di

• Institute for microelectronics and microsystems (IMM) (Istituto)

Autore CNR

• FRANCESCO RUFFINO (Persona)
• ISODIANA CRUPI (Unità di personale interno)
• MARIA GRAZIA GRIMALDI (Persona)

Incoming links:

Autore CNR di

• ISODIANA CRUPI (Unità di personale interno)
• MARIA GRAZIA GRIMALDI (Persona)
• FRANCESCO RUFFINO (Persona)

Prodotto

• Institute for microelectronics and microsystems (IMM) (Istituto)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#rivistaDi

• MRS proceedings (Rivista)